Specificity of high-pure monocrystalline silicon production for various registering and converting devices

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 2
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dc.contributor.author	Trubitsyn, Yu.V.
dc.contributor.author	Zverev, S.V.
dc.date.accessioned	2017-06-13T14:28:20Z
dc.date.available	2017-06-13T14:28:20Z
dc.date.issued	2000
dc.identifier.citation	Specificity of high-pure monocrystalline silicon production for various registering and converting devices / Yu.V. Trubitsyn, S.V. Zverev // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 2. — С. 195-199. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 81.05.C, D, E, G, H, 72.80.C, 73.61.C
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121082
dc.description.abstract	In this paper, recent results of studies focused on detector-grade silicon monocrystals production are summarized and systematized. Described are the manufacturing technology of silicon rod with a diameter up to 105 mm and dislocation-free monocrystals used for fabrication of large area detectors, p-type conductivity crystals with resistivity more than 1000 Ohm·cm being prepared by the method of neutron-transmutation doping.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Specificity of high-pure monocrystalline silicon production for various registering and converting devices	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA