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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Advanced scintillation single crystals based on complex oxides with large atomic number 
    Burachas, S.F.; Nagornaya, L.L.; Onishchenko, G.M.; Piven, L.A.; Pirogov, E.N.; Ryzhikov, V.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    An improved production technology has been developed for scintillation single crystals based on complex oxides with large atomic number – bismuth germanate (BGO), gadolinium silicate (GSO), cadmium tungstate (CWO) and lead ...
  • Application of scintillators based on single-crystalline Lu₃Al₅O₁₂:Ce³⁺ films for radiation monitoring in biology and medicine 
    Zorenko, Yu.; Gorbenko, V.; Konstankevych, I.; Grinev, B.; Globus, M.; Batentschuk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Possibility of producing screens of X-ray detectors using liquid phase epitaxy on Y₃Al₅O₁₂ substrates covered by Lu₃Al₅O₁₂:Ce single crystalline films (SCF) is studied. Optical, luminescent and luminous characteristics of ...
  • Calculation of absorption coefficients of InSb₁₋xBix solid solutions 
    Vyklyuk, J.I.; Deibuk, V.G.; Rarenko, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Using local empirical pseudopotential with spin-orbit interaction taking into account the electron band structure of InSb₁₋xBix in virtual crystal approximation is calculated. For binary compounds InSb and InBi characteristic ...
  • Effect of growth conditions on structure quality of KDP crystals 
    Salo, V.I.; Tkachenko, V.F.; Kolybayeva, M.I.; Pritula, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The effect of different variable crystallization parameters (supersaturation, solution acidity, degree of the solution purity, hydrodynamic growth regime) on structural quality and optical homogeneity of KDP crystals grown ...
  • Functionally graded PbTe-based compound for thermoelectric applications 
    Dashevsky, Z.; Dariel, M.P.; Shusterman, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present study summarizes a feasibility study of the influence of the graded indium profile that is set up by the diffusion of indium from an external source, on the transport properties of PbTe crystals. PbTe crystals ...
  • Induced polar materials for intense radiation monitoring 
    Blonsky, I.V.; Kosorotov, V.F.; Shchedrina, L.V.; Levash, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Theoretical and experimental researches on the electric potential spatial distribution in thin crystal plates of zinc selenide and quartz, presented in this paper, is a constituent part of a common approach elaborated for ...
  • Manufacture and study of new polystyrene scintillators 
    Senchishin, V.G.; Vasilchuk, V.L.; Borisenko, A.Yu.; Lebedev, V.N.; Adadurov, A.F.; Khlapova, N.P.; Titskaja, V.D.; Koba, V.S.; Pelipyagina, L.E.; Miroshnichenko, L.A.; Leman, V.E.; Osadchenko, V.N.; Kluban, N.A.; Shydlovskij, V.G.; Mitsaj, L.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The main optical characteristics and radiation hardness of new polystyrene scintillator UPS98GC were studied. The scintillator UPS-98GC was compared to SCSN-81, produced by Kuraray Co. which is often used in high-energy ...
  • Microstructure of the relaxed (001) Si surface 
    Kiv, A.E.; Soloviev, V.N.; Maximova, T.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    MD computer simulation with the Stillinger-Weber potential have been performed to study a microstructure of silicon surface layers and relaxation processes induced by low energy ion beams. New peculiarities of relaxed (001) ...
  • Multiwave laser source for simultaneous sounding ozone and critically related to ozone chemicals 
    Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The scheme of multiwave laser source, suitable for simultaneous probing ozone and chemicals critically related to ozone (such as HCl, ClONO₂, N₂O₅, HNO₃) participating in its formation and destruction, when using differential ...
  • New interpretation of the boundary diffracted wave origin 
    Anokhov, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The important improvement for Young's model of diffraction is proposed. This interpretation is based on the statement about the existence of the energy transfer process directed from the remaining field towards the boundary ...
  • New possibility of retrospective EPR dosimetry 
    Vorona, I.; Ishchenko, S.; Okulov, S.; Petrenko, T.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Tooth enamel plates irradiated by different types of radiation were studied by electron paramagnetic resonance imaging with local gradient of magnetic field. The dependence of radiation defect distributions on an irradiation ...
  • Optical properties and fine faulty structure of sapphire crystals grown in low pressure CO gas atmosphere 
    Puzikov, V.M.; Danko, A.Ya.; Adonkin, G.T.; Sidelnikova, N.S.; Tkachenko, V.F.; Budnikov, A.T. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Presented in this paper are the results of the study of optical characteristics and fine faulty structure of big sapphire crystals grown in a CO-based low pressure (0.1...0.3 torr) gas atmosphere. Optimal conditions for ...
  • Physical properties of ZnSe-MgSe, ZnSe-CdS solid solutions and possibilities of their application in IR engineering 
    Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O.; Rom, M.A.; Mateychenko, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The vertical Bridgman method is used to obtain crystals of Zn₁₋x Mgx Se and ZnSe-CdS solid solutions (with 0.03 Ј x Ј 0.55 and Cd concentrations varying from 0.3 to 35 at.%, respectively). The composition of the samples ...
  • Radiation-induced changes in infra-red spectrum of black zinc diphosphide monocrystals 
    Kudin, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    For the first time the effect of ionizing particles of different type (gamma-quanta, electrons) and neutrons upon infra-red spectra of zinc diphosphide has been studied. It was shown that the defects of phosphorus sublattice, ...
  • Radioluminescent, thermoluminescent and dosimetric properties of X-ray phosphors 
    Ignatovych, M.; Kelemen, A.; Otvas, N.; Peto, A.; Ogenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Time-resolved radioluminescence (RL) of X-ray phosphors: BaFCl:Eu, ZnS.CdS:Ag and Y₂О₃:Еu, which exhibited ultraviolet (lmax = 390 nm), yellow-green, (lmax = 530 nm) and red (lmax=620 nm) luminescence respectively, have ...
  • Rapidly grown KDP crystals 
    Salo, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Results of the study of optical characteristics, real structure and laser damage threshold of KDP crystals rapidly grown in the direction of a prespecified angle of synchronism (θ = 59°) are described in the present paper. ...
  • Recording of rainbow holograms using As₂Se₃ amorphous layers 
    Minko, V.I.; Indutnyy, I.Z.; Romanenko, P.F.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The simple method of phase-relief rainbow master-hologram recording using the only laser has been developed. In this method at both recording steps (a normal transmission hologram and phase-relief sunlight-viewable master ...
  • Scintillation characteristics of the single crystalline CdWO₄ and Bi₄Ge₃O₁₂ compounds doped with mercury-like ions 
    Zorenko, Yu.; Limarenko, L.; Konstankevych, I.; Pashkovsky, M.; Moroz, Z.; Solsky, I.; Grinev, B.; Nekrasov, V.; Borodenko, Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Investigated are optical, luminescent and light-technical properties of the CdWO₄ and Bi₄Ge₃O₁₂ single crystals doped with mercury-like Bi³⁺ and Pb²⁺ impurities, respectively, with the aim of assertaining the possibility ...
  • Scintillators based on zinc selenide and ticor for detection of charged particles 
    Ryzhikov, V.D.; Danshin, E.A.; Starzhinski, N.G.; Losseva, E.A.; Chernikov, V.V.; Litvinov, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Studies of charged particle detectors based on ZnSe(Te) and Al₂O₃(Ti⁺³) (ticor) optically connected with photodiodes (PD) of S3590 type are reported. The charge-sensitive preamplifier connected with PD had equivalent noise ...
  • Simulation of obliquely incident light propagation through a general twisted nematic liquid crystal cell by the Jones matrix technique 
    Valyukh, S.; Slobodyanyuk, A.; Sorokin, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The simple Jones matrix technique was applied for finding intensity of obliquely incident light that passes through a plate of a uniaxial uniform medium that later was extended to general twisted nematic liquid crystal ...

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