The results of the conductivity examination in the Bi₁₂SiO₂₀ thin films prepared using the sol-gel method are presented. The conductivity was investigated in the 300–550 K temperature and up to 100 V/cm field ranges. It was ...

Dielectric permittivity studies of reduced samples of NaNbO₃ single crystal in the range of temperatures 30–500 °C and frequency 20 Hz-1 MHz are reported. In this temperature range a relaxation process is observed in the ...

ESR spectra of Gd³⁺ probe have been studied in the range of ferroelectric phase transition TC=451 K in lead germanate Pb₅Ge₃O₁₁. Measurements of ESR line position have shown that local order parameter behaves in accordance ...

A phenomenological theory of high-frequency properties of ferroelectric and ferroelectric-ferromagnet with the 3d-ions has been elaborated based on the separate accounting for spin and orbital electron moments, electron and ...

Temperature dependences of the optical path difference by the variable part of refractive index D = (n − 1)l and the components ε′ and ε′′ of complex dielectric permittivity for NH₄HSeO₄ single crystal are studied in ...

This paper is devoted to the measurement results of piezoelectric, dielectric and elastic tensor components in the temperature range between 20 °C and 400 °C. It was revealed that excitation resonance and antiresonance ...

A two-stage layer by layer integration of the ferroelectric two-particle cluster system partition function functional is made in the quartic basic distribution of the dipole momentum fluctuation approximation. The shape ...

The dielectric properties were studied for Na₀.₅Bi₀.₅TiO₃ ceramic as a function of a.c. electric field, d.c. electric field, frequency, and temperature. The increasing strength of a.c. electric field shifts the electric ...

Measurement of the temperature, time and frequency changes of dielectric permittivity and dielectric loss in polycrystalline Li₀.₀₂Na₀.₉₈NbO₃ have been carried out. The dielectric permittivity ε has been measured in the ...

The temperature dependencies of the electrical resistance of low-dimensional NbSe₃- and NbSe₂-single crystals were investigated in the range of 300–540 K. Measurements of resistance were produced along the chains for ...