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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • About influences of different actions on spectra of impurity photoluminescence in GaAs 
    Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown ...
  • Absorption spectra and chromonic phase in aqueous solution of perylenetetracarboxylic bisimides derivatives 
    Camorani, P.; Furier, M.; Kachkovskii, O.; Piryatinskiy, Yu.; Slominskii, Yu.; Nazarenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this article we report the complex investigation of perylenetetracarboxylic bisimides derivatives in water solution. The results deal with all possible concentration in wide range of temperature. The experimentally ...
  • Algorithm of microchip operation for controlling parameters of a latex agglutination reaction 
    Bilyi, O.I.; Yaremyk, R.Y.; Kiselyov, Y.M.; Novikov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the given work the algorithm of work and structure of microchip construction, intended for kinetics researches of formation of modular complexes is considered during the reaction of latex agglutination. The physical ...
  • Bolometric characteristics of macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...
  • Characterization of «solar» multicrystalline silicon by local measurements 
    Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity ...
  • Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon 
    Datsenko, L.I.; Klad’ko, V.P.; Lytvyn, P.M.; Domagala, J.; Machulin, V.F.; Prokopenko, I.V.; Molodkin, V.B.; Maksimenko, Z.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r ...
  • Coupling between propagated modes in optical fibers with periodical structures 
    Bobitski, Y.W.; Fitio, V.M.; Lebid, S.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Theoretical analysis was conducted with the purpose for further development of spectral-sensitive elements for fiber optic devices including sensors of physical magnitudes. Forecasting performances of such elements is ...
  • Descartes-Snell law of refraction with absorption 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The state of the art in the theory of optical constants of matter is considered for different spectral ranges of light absorption. It is stressed that up to now no there exists no commonly accepted formula for calculation ...
  • Features of photoinduced charge transfer in photomagnetic garnets YIG:Si and YIG:Co 
    Davidenko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Features of charge transfer under influence of linearly polarized light in photomagnetic garnets YIG:Si and YIG:Co are clarified. Comparative analysis of these two gernets is necessary to create a basis for the theoretical ...
  • Fourier Raman spectroscopy studies of the As₄₀S₆₀-xSex glasses 
    Stronski, A.V.; Vlček, M.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the investigations of As₄₀S₆₀-xSex glasses with the help of Fourier Raman spectroscopy. The results of Raman spectroscopy investigations indicate increased presence of non-stoichiometric ...
  • Influence of neutron irradiation on elctrooptical and structural properties of silicon 
    Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
  • Influence of structural defects on photoconductivity of zinc diphosphide 
    Kudin, A.P.; Kuts, V.I.; Litovchenko, P.G.; Pinkovska, M.B.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Spectral distribution of photoconductivity of initial and gamma-irradiated p-type zinc diphosphide crystals of tetragonal modification has been studied. It is supposed that band hn = 1.65 eV responses to clusters of defects ...
  • Low-temperature growth of diamond films using supersonic DC arcjet 
    Romanyuk, A.; Gottler, H.; Popov, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Diamond film growth on silicon at substrate temperature between 180 to 360 oC has been studied. The influence of hydrocarbon source on growth conditions and on diamond quality has been also investigated. Several series of ...
  • Optical investigations of thermostimulated changes in an ensemble of CdSxSe₁₋x quantum dots embedded into borosilicate glass matrix 
    Kunets, V.P.; Yukhymchuk, V.O.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have employed the absorption and Raman spectroscopies to study thermostimulated changes in an ensemble of CdSXSe₁₋X quantum dots embedded into a borosilicate glass matrix. It is shown that additional annealing of the ...
  • Raman scattering of light in biaxial monocline β-ZnP₂ crystals 
    Gubanov, O.V.; Kulakovs’kij, V.D.; Poveda, R.A.; Yanchuk, Z.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this paper we represent for the first time observed experimental data on non-resonant Raman scattering in a plate of β-ZnP₂. The high-frequency part of RS spectra КР β-ZnP₂ is determined by oscillations of sites in ...
  • Refractory contact to a-SiC produced by laser technology methods 
    Fedorenko, L.L.; Kiseleov, V.S.; Svechnikov, S.V.; Yusupov, M.M.; Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Developed in the paper are method and technological scheme to obtain ohmic contacts (OC) to a-SiC(:N), Nd - Na ~1 - 3.10¹⁸ cm⁻³ by pulse laser deposition (PLD) of multilayer structures Ni/W/Si₃N₄/W and the following laser ...
  • Silver-related local centres in cadmium sulfide 
    Borkovskaya, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular ...
  • Singular peculiarities of a plane wave diffracted on half-plane 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R.; Soskin, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We analyzed singular properties of edge dislocation waves («EDW») - the main information component of the field formed at plane wave diffraction on half-plane. It is shown that analytical structure of this wave is completely ...
  • Spectral dependence of the photomagnetic effect in porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate ...
  • Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals 
    Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It was shown that thermal treatment of semi-insulating specially undoped gallium arsenide leads to significant changes of lux-brightness characteristics of inter- impurity and impurity bands in the spectra of impurity ...

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