Klochko, N.P.; Klepikova, K.S.; Khrypunov, G.S.; Pirohov, O.V.; Novikov, V.A.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
Nanoscale tin dioxide (SnO₂) and zinc oxide (ZnO) layers are considered as
promising candidates for preparation of sensing elements for metal oxide semiconductor
gas sensors. Tin dioxide films deposited by direct current ...