Анотація:
GaP LEDs with atypical current characteristics are studied by optical and electrical methods.
The thin structure of an S-shaped NDR region which appears in the current-voltage characteristics at low temperatures (100–77 K) after irradiation has become more expressive and possesses
the higher oscillation amplitude. The high destructive influence of fast neutrons on the emitting
recombination is caused by two factors: the electrical fields of radiation defects and the capture
of charged carriers by their levels.