Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility

dc.contributor.author	Arapov, Yu.G.
dc.contributor.author	Harus, G.I.
dc.contributor.author	Karskanov, I.V.
dc.contributor.author	Neverov, V.N.
dc.contributor.author	Shelushinina, N.G.
dc.contributor.author	Yakunin, M.V.
dc.date.accessioned	2017-12-23T21:28:25Z
dc.date.available	2017-12-23T21:28:25Z
dc.date.issued	2007
dc.identifier.citation	Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility / Yu.G Arapov, G.I. Harus, I.V. Karskanov, V.N. Neverov, N.G.Shelushinina, M.V. Yakunin // Физика низких температур. — 2007. — Т. 33, № 2-3. — С. 207-210. — Бібліогр.: 22 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 73.40.–c, 73.43.–f
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/127532
dc.description.abstract	The apparent insulator—quantum Hall—insulator (I—QH—I) transition for filling factor 1 has been investigated in p-type Ge/Ge₁₋xSix heterostructures with εFτ/h ≈ 1. Scaling analysis is carried out for both the low- and high-field transition point. In low magnetic fields ωcτ < 1 pronounced QH-like peculiarities for ν = 1 are also observed in both the longitudinal and Hall resistivities. Such behavior may be evidence of a localization effect in the mixing region of Landau levels and is inherent for two-dimensional structures in a vicinity of the metal—insulator transition.	uk_UA
dc.description.sponsorship	The work was supported by: Russian Foundation for Basic Research RFBR, grants 05-02-16206 and 04-02-16614; program of Russian Academy of Sciences «Low-dimensional quantum heterostructures»; CRDF and Ministry of Education and Science of Russian Federation, grant Y1-P-05-14 (Ek-05 [X1]); Ural Division of Russian Academy of Sciences, grant for young scientists; Russian Science Support Foundation.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Электронные свойства низкоразмерных систем	uk_UA
dc.title	Quantum Hall effect in p-Ge/Ge₁₋xSix heterostructures with low hole mobility	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA