Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 3
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dc.contributor.author	Gutsulyak, B.I.
dc.contributor.author	Oliynych-Lysyuk, A.V.
dc.contributor.author	Fodchuk, I.M.
dc.date.accessioned	2017-06-13T11:21:38Z
dc.date.available	2017-06-13T11:21:38Z
dc.date.issued	2005
dc.identifier.citation	Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon / B.I. Gutsulyak, A.V. Oliynych-Lysyuk, I.M. Fodchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 25-29. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 62.20.Dc, 81.40.Jj
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120967
dc.description.abstract	Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied in the unirradiated and a series of irradiated silicon samples. The appearance of a hysteresis loop is due to interaction of genetic microdefects with crystal point defects and their nonsymmetric distribution in the process of samples heating-cooling.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA