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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Analysis of luminescence method for determination of Cd₁₋xZnxTe composition 
    Glinchuk, K.D.; Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A detailed analysis of the method for determination of Cd₁₋xZnxTe composition x from measurements of 4.2 K peak position of the emission band induced by annihilation of excitons bound with neutral shallow acceptors is ...
  • Analysis of radiation patterns of rectangular microstrip antennas with uniform substrate 
    Boualleg, A.; Merabtine, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Microstrip antennas are useful as antennas mounted on moving vehicles such as cars, planes, rockets, or satellites, because of their small size, light weight and low profile. Since its introduction in 1985, the features ...
  • Anisotropy and non-linearity of absorption of an intensive IR light by free electrons in germanium 
    Vasetskii, V.M.; Ignatenko, V.A.; Poroshin, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The anisotropy and non-linearity of absorption of the intensive CO₂ laser radiation by free electrons in germanium has been found. The effect is caused by redistribution of electrons among equivalent valleys occurring due ...
  • A priori probabilistic model for the reliability of an "organised structure" 
    Sal'kov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The basic possibility to create information model of the certain product (a semiconductor electronic device, or its element: p-n junction, quantum well, etc.) has been considered. Each product may be represented uniquely ...
  • Broadband interference filters with suppression of high reflection bands of 4-, 5- and 6-th orders 
    Pervak, V.Yu.; Poperenko, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The influence of optical constants dispersion on spectral properties of multilayer interference systems, in which spectral characteristics suppression of the adjacent bands of high reflection of 4, 5 and 6-th orders are ...
  • Characteristics of optical limiting in media with nonlinear absorption and scattering 
    Zelensky, S.E.; Kolesnik, O.S.; Kopyshinsky, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A comparative study is performed for characteristics of optical limiting in the media with nonlinear absorption and scattering with the use of nanosecond-scale laser pulses. Two methods are proposed to analyze of experimental ...
  • Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon 
    Gutsulyak, B.I.; Oliynych-Lysyuk, A.V.; Fodchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied ...
  • Dielectric relaxation in Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅ chalcogenide glasses 
    Dwivedi, A.; Arora, R.; Mehta, N.; Choudhary, N.; Kumar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Temperature and frequency dependence of dielectric constant (ε') and dielectric loss (ε") are studied in glassy Se₈₀Ge₂₀ and Se₇₅Ge₂₀Ag₅. The measurements have been made in the frequency range (1 to 10 kHz) and in the ...
  • Influence of low-temperature annealing on the state of CdTe surface 
    Parfenyuk, O.A.; Ilashchuk, M.I.; Chupyra, S.M.; Burachek, V.R.; Korbutyak, D.V.; Krylyuk, S.G.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Influence of low-temperature annealing on electrical and luminescent properties of semi-insulating n-CdTe:Sn is studied. It is shown that annealing at T ≥ 453 K modifies a near-surface layer of the crystals and this enhances ...
  • Light absorption by inhomogeneous semiconductor film 
    Baraban, L.; Lozovski, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Processes of light absorption by thin semiconductor film in the framework of local-field method are studied. The film is inhomogeneously implanted with O⁺ ions. A distribution of implanted layer is characterized by different ...
  • Morphology and optical properties of α-Si:Y films, obtained by electron-beam evaporation method 
    Semikina, T.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    This paper presents the results of AFM, Raman, IR spectroscopy and ellipsometry of α-Si:Y films prepared by electron-beam evaporation. The influence of the type and temperature of substrates, as well as the evaporation ...
  • Multifunctional devices based on induced polar states 
    Kosorotov, V.F.; Shchedrina, L.V.; Levash, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Search for new pyroactive effective materials with controlled polarization properties is carried out with the goal of developing the new generation of pyroelectric sensors with extended functional capabilities. Elaborated ...
  • Photoelectric properties of modified C₆₀ films. Maxwell-Vagner type polarization between near-electrode and bulk layers 
    Koval'chuk, A.V.; Shevchuk, A.F.; Naiko, D.A.; Koval'chuk, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Within the frequency interval of 10⁻¹ to 10⁶ Hz investigated were the frequency dependences of the capacitance C and resistance R for modified С60 films in darkness and on exposure to the focused white light. A clamping ...
  • Photovoltaic and optical properties of a polymer - PbS nanocomposite 
    Lutsyk, P.; Dzura, L.; Kutsenko, A.; Vertsimakha, Ya.; Sworakowski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Photovoltaic and optical properties of a polymer-PbS nanoparticles in polyvinyl alcohol (PVA) films and the effect of annealing in air at various temperatures on these properties are studied in this work. In the range of ...
  • Physico-Chemical model and computer simulations of silicon nanowire growth 
    Efremov, A.; Klimovskaya, A.; Kamins, T.; Shanina, B.; Grygoryev, K .; Lukyanets, S . (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    A model of catalytically enhanced CVD growth of a silicon nanowire assembly on a substrate is developed, and growth process is simulated. Thermodynamic-kinetic theory is used for modeling of molecular transport in the gas ...
  • Polaron effects in exchange clusters (V²⁺ - F⁻ - V²⁺ in KMgF₃) 
    Kashirina, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We have calculated the phonon contribution to the energy of a superexchange. It is shown that the phonon contribution to the exchange interaction is comparable on the order of magnitude with the Coulomb superexchange. The ...
  • Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x 
    Sapaev, B.; Saidov, A.S.; Bacherikov, Yu.Yu.; Konakova, R.V.; Okhrimenko, O.B.; Dmitruk, I.N.; Galak, N.P.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed ...
  • Technology of manufacturing the reliable silicon photoconverters with long operation time 
    Guseynov, N.A.; Askerov, Sh.Q.; Aslanov, Sh.S.; Agaev, M.N.; Gasanov, M.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive ...

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