Analysis of luminescence method for determination of Cd₁₋xZnxTe composition

dc.contributor.author	Glinchuk, K.D.
dc.contributor.author	Litovchenko, N.M.
dc.contributor.author	Prokhorovich, A.V.
dc.contributor.author	Strilchuk, O.N.
dc.date.accessioned	2017-06-13T11:15:30Z
dc.date.available	2017-06-13T11:15:30Z
dc.date.issued	2005
dc.identifier.citation	Analysis of luminescence method for determination of Cd₁₋xZnxTe composition / K.D. Glinchuk, N.M. Litovchenko, A.V. Prokhorovich, O.N. Strilchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 3. — С. 39-44. — Бібліогр.: 18 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 78.55.-m; 78.55.Et
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120964
dc.description.abstract	A detailed analysis of the method for determination of Cd₁₋xZnxTe composition x from measurements of 4.2 K peak position of the emission band induced by annihilation of excitons bound with neutral shallow acceptors is given. Found are the conditions fulfillment of which permits to obtain reliable x values by the above luminescence method.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Analysis of luminescence method for determination of Cd₁₋xZnxTe composition	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA