Behaviour of manganese impurity in β-ZnP₂

dc.contributor.author	Kakazej, M.
dc.contributor.author	Kudin, A.
dc.contributor.author	Pinkovs’ka, M.
dc.contributor.author	Tartachnyk, V.
dc.date.accessioned	2017-06-06T11:13:29Z
dc.date.available	2017-06-06T11:13:29Z
dc.date.issued	2001
dc.identifier.citation	Behaviour of manganese impurity in β-ZnP₂ / M. Kakazej, A. Kudin, M. Pinkovs’ka, V. Tartachnyk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 4. — С. 264-272. — Бібліогр.: 42 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119318
dc.description.abstract	Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure evolution of irradiated and annealed ZnP₂ was studied by the method of the paramagnetic probe (Mn²⁺).	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Behaviour of manganese impurity in β-ZnP₂	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA