ЗМІСТ

Avramenko S.F., Kiselev V.S., Romanyuk B.N., Valakh M.Ya.
Study of postimplantation annealing of SiC

Shekhovtsov L.V.
Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact

Vasetskii V.M., Poroshin V.N., Ignatenko V.A.
Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons

Kakazej M., Kudin A., Pinkovs’ka M., Tartachnyk V.
Behaviour of manganese impurity in β-ZnP₂

Bogoboyashchyy V.V.
Density of heavy hole states of Hg_1-xCd_xTe in an isotropic nonparabolic approximation by exact measurements of electron concentration

Evtukh A.A., Litovchenko V.G., Oberemok A.S., Popov V.G., Rassamakin Yu. V., Romanyuk B.N., Volkov S.G.
Investigations of impurity gettering in multicrystalline silicon

Yakovyna V.S., Berchenko N.N., Nikiforov Yu.N.
The impact of laser shock waves on anodic oxide - compound semiconductor interface

Pashayev A.M., Gadjiyev A.R., Tagiyev T.B., Abbasova T.M.
Hopping conductivity in GaSe monocrystals at low temperatures

Baschenko S.M., Gochelashvili K.S., Zakirov R.M.,. Klimov V.I, Mikhkelsoo V.T., Prokhorov O.M.
Investigation of ArF* excimer laser VUV radiation action on sapphire

Konakova R.V., Milenin V.V., Voitsikhovskyi D.I., Kamalov A.B., Kolyadina E.Yu., Lytvyn P.M., Lytvyn O.S., Matveeva L.A., Prokopenko I.V.
Ordering of lateral nonuniformity of TiB_x film and transition layer in the TiB_x-GaAs system

Chegel’ V.I., Shirshov Yu.M., Kostyukevich S.O., Shepeliavy P.E., Chegel’ Yu.V.
Experimental investigations and computer modeling of the photochemical processes in Ag-As₂S₃ structures using surface plasmon resonance spectroscopy

Agueev O.A., Svetlichny A.M.
The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating

Semikina T. V., Shmyryeva A. N.
Optical and protective properties of different type diamond and diamond-like carbon films

Boltovets N.S., Voitsikhovskyi D.I., Konakova R.V., Milenin V.V., Makara V.A., Rudenko O.V., Mel’nichenko M.M.
Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them

Grigorchuk N.I.
Influence of phonon dispersion on exciton damping in ionic crystals

Berezhinsky L.I., Dovbeshko G.I., Obukhovsky V.V.
Microwave-induced optical non-linearity of amino acid crystals

Semchuk O.Yu., Veskliarskii R.Z., Kosharskii K.G.
Features of optical properties of ferromagnetic semiconductors with dynamic laser-induced gratings

Berezhinsky L.I., Chegel’ V.I., Shirshov Yu.M., Dovbeshko G.I., Melnichuk O.V.
SPR-spectroscopy of protein molecules adsorbed in microwave field

Karachevtseva L.A., Lytvynenko O.O., Malovichko E.O., Stronska O.J., Busaneva E.V., Gorchinsky O.D.
Optical transmittance of 2D macroporous silicon structures

Kovalenko S.A., Lisitsa M.P.
Thickness dependences of optical constants for thin layers of some metals and semiconductors

Morozovska Anna N., Obukhovsky Vyacheslav V., Lemeshko Vasiliy V.
Dynamics of photoinduced instability in ferroelectric photorefractive crystals

Piryatinski Yu. P., Furier M. S., Nazarenko V. G.
Electrooptical properties of liquid crystal n-pentil-n,-cyanobifenil with J-aggregates of astrofloxine

Anokhov S., Khizhnyak A., Lymarenko R.
New method of apertured electromagnetic field modeling

Lysak V.V., Sukhoivanov I.A., Petrov S.I.
Group delay investigation of N-order chirping mirrors

Gubanov V.O., Kulakovs’kij V.D., Poveda R.A., Yanchuk Z.Z.
Raman scattering of light in biaxial monocline β-ZnP₂ crystals