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періодичних видань НАН України
періодичних видань НАН України
Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2
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| dc.contributor.author | Fodchuk, І.М. | |
| dc.contributor.author | Dovganyuk, V.V. | |
| dc.contributor.author | Litvinchuk, Т.V. | |
| dc.contributor.author | Kladko, V.P. | |
| dc.contributor.author | Slobodian, М.V. | |
| dc.contributor.author | Gudymenko, O.Yo. | |
| dc.contributor.author | Swiatek, Z. | |
| dc.date.accessioned | 2017-05-29T13:35:02Z | |
| dc.date.available | 2017-05-29T13:35:02Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry/ І.М. Fodchuk, V.V. Dovganyuk, Т.V. Litvinchuk , V.P. Kladko, М.V. Slobodian, O.Yo. Gudymenko, Z. Swiatek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 209-213. — Бібліогр.: 22 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.10.Kw, Nz, 61.72.Dd, Ff, 68.55.Ln | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/118237 | |
| dc.description.abstract | Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines in high-resolution reciprocal space maps (HR-RSMs) were found as a function of the radiation dose. The generalized dynamic theory of X-ray Bragg-diffraction in crystals comprising defects of several types (spherical and disc-shaped clusters as well as dislocation loops) and a damaged nearsurface layer was used for explanation. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Structural changes in Cz-Si single crystals irradiated with high-energy electrons from data of high-resolution X-ray diffractometry | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
