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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 2 за датою випуску

Сортувати за: Порядок: Результатів:

  • Prudnikava, A.L.; Fedotova, J.A.; Kasiuk, J.V.; Shulitski, B.G.; Labunov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    This paper is devoted to the investigation of phase composition of the magnetic filler located inside multi-wall carbon nanotubes (CNTs) using Mössbauer spectroscopy, scanning electron microscopy (SEM) and transmission ...
  • Dmitriev, S.M.; Dick, V.P.; Kostyuk, N.N.; Dick, T.A.; Loiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Polymermethacrylate (PMMA) and polyvinyl butyral (PVB) thin films with the dispersed liquid crystal droplets are prepared by the described technique. The measurements of light wave polarization-independent phase shift ...
  • Labunov, V.A.; Shulitski, B.G.; Prudnikava, A.L.; Shaman, Y.P.; Basaev, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The carbon nanostructure composed of an array of vertically aligned carbon nanotubes (CNTs) and a planar graphite layer (PGL) located at the top of the array has been obtained by the injection chemical vapor deposition ...
  • Osinsky, V.; Dyachenko, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this work, we firstly investigated controlling the lattice parameter of IIIoxides used as substrates for III-nitrides heterostructures. It was shown that the atomic content change in III-sublattice gives large ...
  • Trofimov, Yu.V.; Lishik, S.I.; Posedko, V.S.; Tsvirko, V.I.; Pautino, А.А. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    State-of-the-art condition of LED illumination engineering for street lighting, its requirements, construction technological features of its creation, optimization ways of optical, thermal and electrical luminaire ...
  • Grytsenko, K.; Kolomzarov, Yu.; Lytvyn, O.; Doroshenko, T.; Strelchuk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Gold nanoclusters were obtained by co-deposition of and polytetrafluoroethylene (PTFE) in vacuum with various gold concentrations. The films deposited were undergone to heating at various temperatures in air. Transformation ...
  • Muravsky, A.A.; Agabekov, V.E.; Tolstik, A.L.; Mahilny, U.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The simple design of liquid-crystal lenses with single electrode and operation voltage below 5 V is highly desired. We offer a new type of photoaligned liquid-crystal lens, where the refractive gradient is created by ...
  • Torgova, S.; Pozhidaev, E.; Lobanov, A.; Minchenko, M.; Khlebtsov, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Composites consisting of nematic liquid crystal (5-CB) and gold nanorods have been elaborated and investigated with a polarizing microscope. It was detected that the nanorods form inside the oriented liquid crystal matrix ...
  • Rybalochka, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the standard waveform composition method for 2+2 dynamic drive schemes results in the dependence of image contrast on image data-content. In this paper, an implementation of this standard method with doubling the ...
  • Misiuk, A.; Barcz, A.; Ulyashin, A.; Antonova, I.V.; Prujszczyk, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Hydrogen gettering by buried layers formed in oxygen-implanted silicon (Si:O prepared by O²⁺ implantation at the energy 200 keV and doses 10¹⁴ and 10¹⁷ cm⁻²) was investigated after annealing of Si:O at temperatures up ...
  • Borkovska, L.V.; Stara, T.R.; Korsunska, N.O.; Pechers’ka, К.Yu.; Germash, L.P.; Bondarenko, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Effect of post-growth thermal annealing within the temperature range 200 to 430 ºC for 15 min on the luminescent characteristics of CdSe/ZnSe quantum dot (QD) heterostructure was studied. Annealing at lower temperatures ...
  • Momot, N.; Zabudsky, V.; Tsybrii, Z.; Apats’ka, M.; Smoliy, M.; Dmytruk, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range ...
  • Grytsenko, K.; Doroshenko, T.; Kolomzarov, Yu.; Lytvyn, O.; Serik, M.; Tolmachev, O.; Slominski, Yu.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Searching new more effective materials for organic electroluminescent displays is continuing. The polymethine dyes is a class of organic materials that are very interesting for these purposes. Films of the polymethine ...
  • Bushma, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    System representation in view of information security for otoelectronic ergatic means is formed. Analytical description in the matrix form for corresponding systems is received. Properties of the received bidimensional ...
  • Timofeyev, V.I.; Faleyeva, E.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Heterostructure transistors with quantum dots (QD) are now very perspective devices because of their higher velocities of electrons in the channel. Simulation results for concentration and carrier velocity distributions ...
  • Dmitruk, N.L.; Borkovskaya, O.Yu.; Havrylenko, T.S.; Naumenko, D.O.; Petrik, P.; Meza-Laguna, V.; Basiuk, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Fullerene C₆₀ films were grown using physical vapor deposition on Si substrates at room temperature. Then chemical modification with cross-linking these films was performed using the reaction with 1,8-octanediamine (DA) ...
  • Bachinsky, V.T.; Ushenko, Yu.O.; Tomka, Yu.Ya.; Dubolazov, O.V.; Balanets’ka, V.O.; Karachevtsev, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Considered in this paper are the possibilities of local wavelet analysis for polarization-inhomogeneous images inherent to blood plasma of healthy and oncologically ill patients. Determined is the set of statistical, ...
  • Sukach, A.V.; Tetyorkin, V.V.; Krolevec, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Cadmium telluride (CdTe) polycrystalline films grown on glass ceramic substrates by a modified close-spaced vapor transport technique have been investigated. The as-grown films have columnar structure with the average ...
  • Fodchuk, І.М.; Dovganyuk, V.V.; Litvinchuk, Т.V.; Kladko, V.P.; Slobodian, М.V.; Gudymenko, O.Yo.; Swiatek, Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Structural changes in silicon single crystals irradiated with high-energy electrons (Е = 18 MeV) were studied. The peculiarities of diffraction reflection curve behaviour and changes in the profiles of isodiffusion lines ...
  • Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Mobility of band carriers scattered on donors, partially ionized, partially neutral, at low temperatures, is considered in general and calculated for AIII-BV group crystals. It is shown that temperature dependence of ...

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