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dc.contributor.author |
Dmitruk, N.L. |
|
dc.contributor.author |
Borkovskaya, O.Yu. |
|
dc.contributor.author |
Havrylenko, T.S. |
|
dc.contributor.author |
Naumenko, D.O. |
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dc.contributor.author |
Petrik, P. |
|
dc.contributor.author |
Meza-Laguna, V. |
|
dc.contributor.author |
Basiuk, E.V. |
|
dc.date.accessioned |
2017-05-29T13:30:42Z |
|
dc.date.available |
2017-05-29T13:30:42Z |
|
dc.date.issued |
2010 |
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dc.identifier.citation |
Effect of chemical modification of thin C₆₀ fullerene films
on the fundamental absorption edge / N.L. Dmitruk, O.Yu. Borkovskaya, T.S. Havrylenko, D.O. Naumenko, P. Petrik, V. Meza-Laguna, E.V. Basiuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 2. — С. 180-185. — Бібліогр.: 21 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS 78.40.Ri |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118234 |
|
dc.description.abstract |
Fullerene C₆₀ films were grown using physical vapor deposition on Si
substrates at room temperature. Then chemical modification with cross-linking these
films was performed using the reaction with 1,8-octanediamine (DA) or octane-1,8-
dithiol (DT). These chemically cross-linked C₆₀ films are capable of stable binding the
Ag or Au nanoclusters. Optical properties of the obtained nanostructured hybrid films
were investigated by both reflectance spectroscopy and spectral ellipsometry within the
spectral range 1.55 to 5.0 eV at various angles of incidence. From the spectral
dependences of the extinction coefficient in the region of optical absorption edge, the
physical nature of the fundamental allowed direct band-gap transitions between HOMOLUMO
states Eg, the optical absorption edge near the intrinsic transition Eo, and
exponential tail of the density-of-states caused by defects have been determined.
Influence of chemical modification and decoration of metal nanoparticles on the above
mentioned parameters has been analyzed. |
uk_UA |
dc.description.sponsorship |
Financial support from the National Autonomous
University of Mexico (grant DGAPA IN 103009) and
from the National Council of Science and Technology of
Mexico (grant CONACYT 56420) is greatly
appreciated. V. M.-L. is grateful to DGAPA for a
postdoctoral fellowship. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Effect of chemical modification of thin C₆₀ fullerene films on the fundamental absorption edge |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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