Показати простий запис статті
dc.contributor.author |
Smyntyna, V.A. |
|
dc.contributor.author |
Borschak, V.A. |
|
dc.contributor.author |
Kutalova, M.I. |
|
dc.contributor.author |
Zatovskaya, N.P. |
|
dc.contributor.author |
Balaban, A.P. |
|
dc.date.accessioned |
2017-05-29T05:40:27Z |
|
dc.date.available |
2017-05-29T05:40:27Z |
|
dc.date.issued |
2004 |
|
dc.identifier.citation |
Sensor based on a non-ideal heterojunction to indicate X-ray images / V.A. Smyntyna, V.A. Borschak, M.I. Kutalova, N.P. Zatovskaya, A.P. Balaban // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 222-223. — Бібліогр.: 4 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS: 07.07.D |
|
dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118180 |
|
dc.description.abstract |
The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is sensitive to soft X-ray radiation. Memory and accumulation of a signal at a room temperature, which is characteristic of the sensor at registration of images in visible light, take place for the images obtained in X-ray range, too, which makes it possible to apply such sensor in medicine and crystallography. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Sensor based on a non-ideal heterojunction to indicate X-ray images |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
Файли у цій статті
Ця стаття з'являється у наступних колекціях
Показати простий запис статті