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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • A T-matrix many-particle theory for coherently coupled superlattice optics 
    Schmielau, T.; Pereira Jr., M.F.; Henneberger, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The high- order Coulomb correlations described by T-matrix diagrams in both carrier occupation and polarization functions are studied here with a Keldysh- Green’s Functions formalism. Numerical applications for low dimensional ...
  • Composite film structures containg ZnS, CdS nanoparticles prepared by MOC pyrolysis at low temperatures 
    Svechnikov, G.S.; Zavyalova, L.V.; Roshchina, N.N.; Prokopenko, I.V.; Berezhinsky, L.I.; Khomchenko, V.S.; Litvin, O.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    New composite structures containing ZnS, CdS nanoparticles were prepared with bright light-blue colour of a luminescence. The structures were formed by spraying organic solution of zinc or cadmium ditiocarbamate onto ...
  • Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions 
    Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...
  • Diluted magnetic А₁₋xMnxВ semiconductors 
    Bryksa, V.P.; Tarasov, G.G.; Masselink, W.T.; Nolting, W.; Mazur, Yu.I.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Novel model of the diluted magnetic semiconductors (DMS) А₁₋xMnxВ possessing the metallic conductivity is proposed. Using the coherent potential technique the electron scattering by the randomly distributed Mn centers ...
  • Ellipsometric control of quality of polished MgF₂ optical ceramics 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work, ellipsometric measurements were used to optimise the technology of machine working the polished parts made of MgF₂ optical ceramics. The ellipsometry is a high-performance contactless method to control quality ...
  • Erratum: to the paper “Influence of elastic deformation on the residual ellipticity of polished optical materials” 
    Maslov, V.P.; Sarsembaeva, A.Z.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The elastic deformation of thin mirrors is widely used in systems of adaptive optics, however, of influence of elastic deformations on parameters of reflected polarised light in the literature. Using the method of ...
  • Growth and linear optical properties of CuCl nanocrystals 
    Mahtout, S.; Belkhir, M.A.; Samah, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Linear optical properties of CuCl nanocrystals in a NaCl matrix have been studied using optical absorption, cathodoluminescence and X-ray diffraction measurements. Our measurements showed that CuCl nanocrystals were really ...
  • Influence of high hydrostatic pressure on energetic structure and electron-lattice coupling of transition metal and rare earth related centers in solids 
    Grinberg, M.; Barzowska, J.; Gryk, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We present the results of the photoluminescence of the crystals doped with transition metals or rare earth ions obtained under high hydrostatic pressure up to 300 kbar applied in diamond anvil cells (DAC). We have focused ...
  • Investigation of nanophase separation in IR optical glasses As₄₀Se₆₀ using resonant Raman scattering 
    Mateleshko, N.; Mitsa, V.; Veres, M.; Koos, M.; Stronski, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Resonant Raman spectra of stoichiometric glass (g) g-As₄₀Se₆₀ have been investigated. It was observed that the increasing of excitation radiation energy hv>E₀ (E₀ is pseudogap width) changes a shape, intensity, and position ...
  • Laser-induced non-linear light scattering in a suspension of black-body particles 
    Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Characteristics of non-linear scattering of powerful pulses of Q-switched YAG:Nd³⁺ laser in an aqueous suspension of submicron-sized black-body particles has been investigated. Proposed is a model describing the results ...
  • “Multicoloured” superradiance in quantum heterostructures 
    Pikaruk, O.O.; Klimovskaya, A.I.; Driga, Yu.A.; Gule, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The analysis of photoluminescence of heterostructures with single elastic-strained In₀.₁₆Ga₀.₈₄As quantum wells is carried out in this work. It is shown, that filling of a quantum well with many quantum subbands results ...
  • Multisensor systems for gas analysis: optimization of arrays for classification of pharmaceutical products 
    Kruglenko, I.V.; Snopok, B.A.; Shirshov, Yu.M.; Rowell, F.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In the present work, the use of the cluster analysis method in the “fuzzy logic” concept for the optimization of the cross-selective sensor arrays (“electronic nose”, EN) is considered. This approach enables to purposefully ...
  • Optical study of thermally induced phase separation in evaporated SiOx films 
    Indutnyy, I.Z.; Lisovskyy, I.P.; Mazunov, D.O.; Shepeliavyi, P.E.; Rudko, G.Yu.; Dan'ko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, ...
  • Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type ...
  • Photon Green’s functions theory for Coulomb correlated quantum well lasers 
    Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A photon Green’s function theory is used to incorporate Bethe-Salpeter-like many body corrections in the computations of output spectra of semiconductor quantum well lasers. Coulomb, quantum-confinement, multiple valence ...
  • Polymeric compositions having near IR photoconduction 
    Davidenko, N.A.; Kuvshinsky, N.G.; Melenevsky, D.A.; Derevyanko, N.A.; Ishchenko, A.A.; Kulinich, A.V.; Neilands, O.; Plotniece, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiar properties of carrier photogeneration in the polymer compositions based on polystyrene containing substituted tetrathiafulvalenes – electron donors, 2,4,5,7-tetranitro-9-fluorenone – acceptor of electrons, cationic ...
  • Portable three-wavelength standard for energy unit of pulse laser radiation 
    Owsik, J.; Zarwalska, A.; Janucki, Ja.; Samoylov, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    New instrument for applications in metrological measurements of laser pulse energy is presented. Due to its parameters, it can be used as a standard for energy unit of pulse laser radiation. The instrument consists of a ...
  • Properties of CdTe thin films prepared by hot wall epitaxy 
    Bilevych, Ye.O.; Boka, A.I.; Darchuk, L.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F.; Boelling, O.; Sulkio-Cleff, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin ...
  • RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures 
    Sghaier, H.; Bouzaiene, L.; Sfaxi, L.; Maaref, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is ...
  • Sensor based on a non-ideal heterojunction to indicate X-ray images 
    Smyntyna, V.A.; Borschak, V.A.; Kutalova, M.I.; Zatovskaya, N.P.; Balaban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The sensor of optical image on the basis of non-ideal heterojunctions are investigated in detail. In this work, the opportunity to obtain the image in X-rays was investigated. It is established that investigated sensor is ...

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