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періодичних видань НАН України
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Configuration interaction in delta-doped heterostructures
Репозиторій DSpace/Manakin
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Configuration interaction in delta-doped heterostructures
Тема:
XIX Уральская международная зимняя школа по физике полупроводников
Інший ID:
PACS: 75.75.–c, 78.55.Cr, 78.67.De
Посилання:
Configuration interaction in delta-doped heterostructures / I.V. Rozhansky, N.S. Averkiev, E. Lähderanta // Физика низких температур. — 2013. — Т. 39, № 1. — С. 40–47. — Бібліогр.: 13 назв. — англ.
Підтримка:
We thank V.D. Kulakovskii for very fruitful discussions
and also express our thanks to B.A. Aronzon, P.I. Arseev,
V.L. Korenev, M.M. Glazov, V.F. Sapega, S.V. Zaitsev for
very useful and helpful comments. The work has been
supported by RFBR (grants Nos. 11-02-00348, 11-02-
00146, 12-02-00815, 12-02-00141), Russian Ministry of
Education and Science (contract N 14.740.11.0892, contract
N 11.G34.31.0001 with SPbSPU and leading scientist
G.G. Pavlov), RF President Grant NSh-5442.2012.2.
Дата:
2013
Переглядів:
779
Завантажень:
472
Анотація:
We analyze the tunnel coupling between an impurity state located in a δ-layer and the 2D delocalized
states in the quantum well (QW) located at a few nanometers from the δ-layer. The problem is formulated in
terms of Anderson–Fano model as configuration interaction between the carrier bound state at the impurity
and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions
in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs
structures with a δ-Mn layer.
