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dc.contributor.author |
Mazur, Yu. I. |
|
dc.date.accessioned |
2017-05-27T09:35:17Z |
|
dc.date.available |
2017-05-27T09:35:17Z |
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dc.date.issued |
1999 |
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dc.identifier.citation |
Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe / Yu. I. Mazur // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 35-41. — Бібліогр.: 28 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
|
dc.identifier.other |
PACS: 78.55.Et, 07.65.Gj, 63.20.Ls |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/117860 |
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dc.description.abstract |
New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg₁₋x₋yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing the optical spectra of this narrow-gap semiconductor is found. An indirect «hot exciton» absorption under participation of longitudinal optical phonons occurs to be the main absorption mechanism. It was shown, that knowledge about the excitonic processes in wide gap semiconductors also can be applied to high-quality narrow-gap materials. |
uk_UA |
dc.description.sponsorship |
The author would like to acknowledge Prof. G. G. Tarasov
and Dr. J. W. Tomm for several helpful and illuminating
discussions, Dr. F. Fuchs for the possibility of
PLE measurements and Dr. O. A. Bodnaruk for supplying
the Hg₁₋x-yCdxMnyTe single crystals of high quality |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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