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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1 за датою випуску

Сортувати за: Порядок: Результатів:

  • Optically controlled 2D tunnelling in GaAs delta-doped p-n junction 
    Vitusevich, S. A.; Forster, A.; Belyaev, A. E.; Glavin, B. A.; Indlekofer, K. M.; Luth, H.; Konakova, R. V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers ...
  • Amplification of localized acoustic waves by the electron drift in a quantum well 
    Demidenko, A. A.; Kochelap, V. A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    We have investigated acoustic waves in a heterostructure with a layer embedded into a semiconductor providing acoustic waves localization near the layer and electron confinement inside the layer. For layer thicknesses ...
  • Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands 
    Grigorchuk, N. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton ...
  • Saturation of optical absorption in CdS single crystals 
    Malysh, N. I.; Kunets, V. P.; Valiukh, S. I.; Kunets, Vas. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The absorption saturation of CdS single crystals was investigated in the Urbach region. It was shown that the threshold behaviour of the absorption coefficient is caused by recharging of the shallow acceptors, and the ...
  • Photoluminescence excitation spectroscopy in narrow - gap Hg₁₋x₋yCd xMnyTe 
    Mazur, Yu. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New results on infrared photoluminescence and photoluminescence excitation spectroscopy around the fundamental energy gap in Hg₁₋x₋yCdxMnyTe single crystal are presented. A very strong electron-phonon coupling influencing ...
  • Dissolution of indium arsenide in nitric solutions of the hydrobromic acid 
    Tomashik, Z.F.; Danylenko, S.G.; Tomashik, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Dissolution of InAs in HNO₃-HBr-H₂O solutions is studied. The surface of equal etching rates is constructed, and the limiting stages of the dissolution process are determined. Depending on the [HNO₃]/[HBr] ratio, InAs ...
  • ENDOR study of irradiated tooth enamel 
    Ishchenko, S.; Vorona, I.; Okulov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    γ- and x-irradiated tooth enamel has been studied by EPR and ENDOR. Radiation-induced EPR spectrum of tooth enamel was found to be a superposition of signals with dominant contribution determined by CO₂- radicals. Two types ...
  • Silicon-on-insulator technology for microelectromechanical applications 
    Usenko, A.Y.; Carr, W.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A purpose of the paper is to give a review of recent development (1998-1999) in microelectromechanical (MEMS) devices formed on silicon-on-insulator (SOI) substrates. Advantages of using SOI are summarised. Problems of ...
  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • IR sensor readout devices with source input circuits 
    Sizov, F.F.; Reva, V.P.; Derkach, Yu.P.; Kononenko, Yu.G.; Golenkov, A.G.; Korinets, S.V.; Darchuk, S.D.; Filenko, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, ...
  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Resistance thermometers based on the germanium films 
    Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature ...
  • Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds 
    Korsunskaya, N. E.; Markevich, I. V.; Dzhumaev, B. R.; Borkovskaya, L. V.; Sheinkman, M. K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated ...
  • Electro-physical properties of γ-exposed crystals of silicon and germanium 
    Dotsenko, Yu. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep ...
  • Structure perfection variations of Si crystals grown by Czochralski or floating zone methods after implantation of oxygen or neon atoms followed by annealing 
    Datsenko, L.I.; Auleytner, J.; Misiuk, A.; Klad'ko, V.P.; Machulin, V.F.; Bak-Misiuk, J.; Zymierska, D.; Antonova, I.V.; Melnyk, V.M.; Popov, V.P.; Czosnyka, T.; Choinski, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Structure perfection of the silicon crystals grown by the Czochralski and floating zone methods after implantation with oxygen or neon fast iones followed by annealing at the temperatures T ~ 1050-1150 ⁰0C, when large SiOx ...
  • Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals 
    Bogoboyashchiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation ...
  • Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films 
    Mamikonova, V.M.; Kasimov, F.D.; Kemerchev, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The possibility of forming polycrystalline silicon films by pulse thermal annealing has been investigated using measurement of a photo-e.m.f., dark and light voltage-current characteristics. Investigated samples were ...
  • Investigation of structural perfection of SiC ingots grown by a sublimation method 
    Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...
  • Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide 
    Venger, Ye.F.; Milenin, V.V.; Ermolovich, I.B.; Konakova, R.V.; Voitsikhovskiy, D.I.; Hotovy, I.; Ivanov, V. N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, ...
  • Iodine-stabilized He-Ne laser pumped by transverse rf-discharge 
    Boyko, O.V.; Negriyko, A.M.; Yatsenko, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of experimental investigations of He-Ne/¹²⁷I₂ lasers (l = 633 nm) pumped by transverse rf-discharge are presented. Due to the low level of amplitude fluctuations, the frequency stability of such lasers reaches ...

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