Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2
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Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 1
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dc.contributor.author	Grigorchuk, N. I.
dc.date.accessioned	2017-05-27T09:30:08Z
dc.date.available	2017-05-27T09:30:08Z
dc.date.issued	1999
dc.identifier.citation	Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands / N. I. Grigorchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 1999. — Т. 2, № 1. — С. 25-30. — Бібліогр.: 21 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 71.35; 71.36; 78.20; S12
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117858
dc.description.abstract	Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton damping due to lattice imperfections is accounted for as a frequency independent parameter. The obtained analytical expressions allow analyses of the line-shape for different space dimensions of structure depending on bandwidth difference, damping parameter and temperature.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA