Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4 за назвою

Сортувати за: Порядок: Результатів:

  • About influences of different actions on spectra of impurity photoluminescence in GaAs 
    Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Considered is the possibility to determine changes stimulated by external actions on a ratio between different luminescence center concentrations in GaAs crystals when using their photoluminescence spectra. It was shown ...
  • Absorption spectra and chromonic phase in aqueous solution of perylenetetracarboxylic bisimides derivatives 
    Camorani, P.; Furier, M.; Kachkovskii, O.; Piryatinskiy, Yu.; Slominskii, Yu.; Nazarenko, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In this article we report the complex investigation of perylenetetracarboxylic bisimides derivatives in water solution. The results deal with all possible concentration in wide range of temperature. The experimentally ...
  • Activation of porous Si blue emission due to preanodization ion implantation 
    Rozhin, A.G.; Klyui, N.I.; Litovchenko, V.G.; Melnik, V.P.; Romanyuk, B.N.; Piryatinskii, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a ...
  • Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes 
    Vlasenko, N.A.; Kononets, Ya.F.; Denisova, Z.L.; Kopytko, Yu.V.; Veligura, L.I.; Soininen, El.; Tornqvist, R.O.; Vasama, K.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors ...
  • Algorithm of microchip operation for controlling parameters of a latex agglutination reaction 
    Bilyi, O.I.; Yaremyk, R.Y.; Kiselyov, Y.M.; Novikov, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the given work the algorithm of work and structure of microchip construction, intended for kinetics researches of formation of modular complexes is considered during the reaction of latex agglutination. The physical ...
  • Behaviour of manganese impurity in β-ZnP₂ 
    Kakazej, M.; Kudin, A.; Pinkovs’ka, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Behavior of manganese impurity in black zinc diphosphide was investigated for the first time by the EPR method at room temperature. The nature of basic singularities of an EPR spectrum was determined. The defect structure ...
  • Bolometric characteristics of macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Bolometric characteristics of macroporous silicon were investigated. Ohmic structures of the type «In/n-Si» and «In/macroporous n-Si» were formed by thermal evaporation of indium in an atmosphere of hydrogen. Temperature ...
  • Characterization of «solar» multicrystalline silicon by local measurements 
    Popov, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The features of local measurements of «solar» multicrystalline silicon (mc-Si) parameters are surveyed using examples of grain sizes, diffusion length of minority non-equilibrium charge carriers Ld and effective reflectivity ...
  • Complex diffractometrical investigation of structural and compositional irregularities in GaAs:Si/GaAs films heavily doped with silicon 
    Datsenko, L.I.; Klad’ko, V.P.; Lytvyn, P.M.; Domagala, J.; Machulin, V.F.; Prokopenko, I.V.; Molodkin, V.B.; Maksimenko, Z.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Complex of X-ray diffractometrical investigations, both angular and spectral dependences of a reflectivity for quasi-forbidden reflections, enable not only to discover structural microdefects and to measure their radii r ...
  • Comprehensive studies of defect production and strained states in silicon epitaxial layers and device structures based on them 
    Boltovets, N.S.; Voitsikhovskyi, D.I.; Konakova, R.V.; Milenin, V.V.; Makara, V.A.; Rudenko, O.V.; Mel’nichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the Lang technique of x-ray topography, double-crystal x-ray spectrometry and selective chemical etching, we investigated the defect production in silicon epitaxial structures grown on the n⁺-Si substrates (surface ...
  • Coupling between propagated modes in optical fibers with periodical structures 
    Bobitski, Y.W.; Fitio, V.M.; Lebid, S.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Theoretical analysis was conducted with the purpose for further development of spectral-sensitive elements for fiber optic devices including sensors of physical magnitudes. Forecasting performances of such elements is ...
  • Crystallochemistry of defects in lead telluride films 
    Freik, D.M.; Ruvinskii, M.A.; Ruvinskii, B.M.; Galushchak, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects ...
  • Degenerate four-wave mixing in n-Ge due to intervalley redistribution of hot electrons 
    Vasetskii, V.M.; Poroshin, V.N.; Ignatenko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We have studied backward degenerate four-wave mixing at CO₂ laser wavelengths in n-type Ge. Phase conjugation due to redistribution of free electrons between equivalent valleys was observed. The effect is related to carrier ...
  • Density of heavy hole states of Hg₁-xCdxTe in an isotropic nonparabolic approximation by exact measurements of electron concentration 
    Bogoboyashchyy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    High precision measurements of intrinsic electron concentration ni in Hg₁₋xCdxTe crystals were made in broad ranges of compositions (x = 0…0.31) and temperatures (T = 77…420 К). It was found that effective mass of the ...
  • Descartes-Snell law of refraction with absorption 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The state of the art in the theory of optical constants of matter is considered for different spectral ranges of light absorption. It is stressed that up to now no there exists no commonly accepted formula for calculation ...
  • Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors 
    Baranskii, P.I.; Babich, V.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical ...
  • Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well 
    Korovin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The difference harmonic generation in an asymmetric quantum well based on AlSb/InSb heterostructures has been calculated. The intersubband electron spin-flip transitions are analyzed in the framework of the three-band Kane ...
  • Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films 
    Nesterenko, B.O.; Kazantseva, Z.I.; Stadnyk, O.A.; De Rossi, D.; Kalchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). ...
  • Dynamics of photoinduced instability in ferroelectric photorefractive crystals 
    Morozovska, A.N.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the paper we theoretically consider the dynamics of the inner field generated by recharging trap waves propagation and spatial-temporal features of the photoinduced light scattering caused by these phenomena in the ...
  • Effect of oxide-semiconductor interface traps on low-temperature operation of MOSFETs 
    Lysenko, V.S.; Tyagulski, I.P.; Gomeniuk, Y.V.; Osiyuk, I.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Operation of n-channel MOSFET was studied at low temperatures. It has been shown that the charge state of shallow traps in the Si/SiO₂ interface is responsible for the hysteresis of transistor drain characteristics in the ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис