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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5 за назвою

Сортувати за: Порядок: Результатів:

  • A free-space alignment technique for active optical waveguide components 
    Karim, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In this paper an easy to use free-space alignment technique for the alignment of different active optical waveguide components is reported. This technique has successfully been implemented for the characterization of ...
  • Allowable deviation of LC layer thickness in cholesteric LCDs 
    Rybalochka, A.; Sorokin, V.; Sorokin, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The deviation of liquid crystal (LC) layer thickness in a display cell has considerable influence on the image quality at the addressing of cholesteric liquid crystal displays (ChLCD) by different kind of dynamic drive ...
  • Alloy scattering in quantum well wire structures of semiconductor ternaries 
    Ibragimov, G.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We studied the effect of the alloy-disorder-scattering on the electron transport in a quasi-one-dimensional semiconductor. Performed were analytical calculations of the alloy-disorder-limited momentum relaxation time for ...
  • Analysis of the near-band-edge luminescence of semiconductors containing isolated and bound shallow acceptors and donors 
    Glinchuk, K.D.; Prokhorovich, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Expressions for line intensities in the near-band-edge luminescence spectrum of semiconductors containing both isolated and bound shallow acceptors and donors are given. Found are the conditions when isolated and bound ...
  • Atomic and electronic structure of a-SiC 
    Ivashchenko, V.I.; Shevchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Molecular dynamics (MD) simulations based on an empirical potential approach have provided detailed information about chemical ordering and the structural short-range order in stoichiometric amorphous silicon carbide ...
  • A universal automated complex for control and diagnostics of semiconductor devices and structures 
    Konakova, R.V.; Rengevych, O.E.; Kurakin, A.M.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We present a universal automated complex for control and diagnostics. It is intended to measure static, pulse and capacitance-voltage characteristics of two- and three-terminal networks, both at room temperature and in ...
  • Balance model for contactless chemo-mechanical polishing of wafers 
    Grigoriev, N.N.; Kravetsky, M.Yu.; Paschenko, G.A.; Sypko, S.A.; Fomin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We developed a physical model for polishing. It makes it possible to determine physico-chemical processes occurring at contactless chemo-mechanical polishing (CMP) of crystal surfaces. A balance equation for diffusion, ...
  • Borophosphosilicate glass component analysis using secondary neutral mass spectrometry 
    Oberemok, O.; Lytvyn, P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the present study the SNMS technique for the quantitative component analysis of the borophosphosilicate glass layers was used. These layers were deposited on the silicon substrate by chemical vapor deposition method. ...
  • Characterization of MOS structure using low-k dielectric methylsilsesquioxane with evaporated and sputtered aluminium gate 
    Aw, K.C.; Ibrahim, K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The organic methylsilsesquioxane (MSQ) demonstrates low dielectric constant value (2.6) and is promising interlayer dielectric material to reduce the capacitive coupling between metal layers in semiconductor integrated ...
  • Concentration anomaly of heat capacity in PbTe based solid solutions 
    Rogacheva, E.I.; Sinelnik, N.A.; Krivulkin, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The temperature dependences of the heat capacity in the Pb₁-xMnxTe and Pb₁-xGexTe (x = 0-0.04) solid solutions based on PbTe were obtained in the temperature range of 100-670 K. Pronounced peaks were observed in the isotherms ...
  • Conductivity of sandwich-structures based on dye-doped photoconducting and non-photoconducting polymer films 
    Davidenko, N.A.; Derevyanko, N.A.; Fenenko, L.I.; Ishchenko, A.A.; Olkhovik, G.P.; Smertenko, P.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Electroconducting properties of sandwich-structure samples with films based on photoconducting polymer poly-N-epoxypropylcarbazole and non-photoconducting polyvinylethylal, doped by cationic, anionic, neutral and intraionic ...
  • Control circuits for LED positional indicator 
    Bushma, A.V.; Sukach, G.A.; Mischenko, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We discuss the main concepts of circuit solutions for positional data representation and propose appropriate mathematical models. The basic features of positional information model formation in the displays with different ...
  • Correlation method for pattern recognition 
    Yezhov, P.V.; Kuzmenko, A.V.; Komarov, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A new approach towards solving the pattern recognition problems in hybrid optical/digital correlators is suggested. The method is based on the authors' know-how-principle of transforming the field intensity or amplitude ...
  • Current flow mechanisms in p-i-n­ structures based on cadmium telluride 
    Gorley, P.M.; Demych, M.V.; Makhniy, V.P.; Horvath, Zs.J.; Shenderovsky, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as ...
  • Deep-level defects in CdSe/ZnSe QDs and giant anti-Stokes photoluminescence 
    Valakh, M.Ya.; Sadofyev, Yu.G.; Korsunska, N.O.; Semenova, G.N.; Strelchuk, V.V.; Borkovska, L.V.; Vuychik, M.V.; Sharibaev, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    CdSe/ZnSe structures with a quantum dot extrinsic photoluminescence band related to the defects that contain vacancies in cation sublattice has been investigated. It is shown that such defects can be localized in different ...
  • Defects and radiation-enhanced defect reactions in ZnSe/(001)GaAs MBE layers 
    Semenova, G.N.; Venger, E.F.; Korsunska, N.O.; Klad’ko, V.P.; Borkovska, L.V.; Semtsiv, M.P.; Sharibaev, M.B.; Kushnirenko, V.I.; Sadofyev, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Optical and structural properties of undoped ZnSe epilayers with thickness ranging from 0.5 to 2 mm grown by molecular beam epitaxy on GaAs (001) substrates have been investigated by depth resolved optical and X-ray methods. ...
  • Dielectric, ferroelectric and piezoelectric properties of sputtered PZT thin films on Si substrates: influence of film thickness and orientation 
    Haccart, T.; Cattan, E.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Lead titanate zirconate Pb(Zr,Ti)O₃ (PZT) thin films were deposited on platinized silicon substrates by r.f. magnetron sputtering and crystallized with preferred (110) or (111) orientation by conventional annealing treatment. ...
  • Divergent-beam X-ray structural studies of a disturbed surface layer in silicon plates 
    Tkach, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    A Kossel chamber for reflected-beam X-ray studying of single crystal surfaces has been developed on the basis of a BS-340 scanning electron microscope. We have examined the structure of a disturbed layer of silicon plates ...
  • Dynamics of photoinduced instability in ferroelectric photorefractive crystals caused by space recharging trap waves 
    Morozovska, A.N.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    In the paper we theoretically consider the dynamics of the inner field generated by recharging trap waves propagation and spatial-temporal features of the photoinduced light scattering caused by these phenomena in the ...
  • Effect of mechanical stress on operation of diode temperature sensors 
    Borblik, V.L.; Shwarts, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Effect of uniaxial elastic strain (of moderate magnitude) on operation of n+- p-type diode temperature sensor made in silicon is considered theoretically. It is assumed that operating current and stress direction coincide ...

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