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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3 за датою випуску

Сортувати за: Порядок: Результатів:

  • Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices 
    Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to ...
  • Properties of the shallow D-centers in semiconductors with polar and covalent binding 
    Kashirina, N.I.; Lakhno, V.D.; Sychyov, V.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been ...
  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • Injection currents in lamellar crystals of gallium telluride 
    Madatov, R.S.; Tagiyev, T.B.; Gabulov, I.A.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the ...
  • Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures 
    Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...
  • Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures 
    Borkovska, L.V.; Korsunska, N.O.; Kushnirenko, V.I.; Sadofyev, Yu.G.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. ...
  • Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots 
    Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • Regularities of visible photoluminescence creation in low-dimensional silicon structures 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie ...
  • Avalanche multiplication of charge carriers in nanostructured porous silicon 
    Timokhov, D.F.; Timokhov, F.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The phenomenon of avalanche multiplication of charge carriers in Al/PS-(c-Si) sandwich-structures based on nanostructured porous silicon (PS) is studied. Experimentally received dependences of ionization rates on intensity ...
  • Role of silicon oxide defects in emission process of Si-SiO₂ systems 
    Baran, M.; Bulakh, B.; Korsunska, N.; Khomenkova, L.; Yukhymchuk, V.; Sheinkman, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad ...
  • Many particle and bandstructure effects in intersubband quantum well optics 
    Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper, intersubband optical absorption spectra are computed from an optical susceptibility derived from the many-body formalism. The theory is valid for both non-equilibrium and equilibrium conditions. Numerical ...
  • The features of phonon component of linear dichroism in uniaxially strained silicon crystals 
    Serdega, B.K.; Venger, E.F.; Matyash, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral ...
  • Photo-microdomains in ferroelectrics: formation and light scattering caused by them 
    Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We propose the theory of the micro-domains (MD) formation in ferroelectric photorefractive crystals appeared under steady illumination by laser beam perpendicular to the polar axis. The crystal has the donor level made ...
  • Analysis of exciton reflection spectrum of 2H-PbI₂ layered single crystals with atomically clean surface 
    Dorogan, V.G.; Zhydkov, V.O.; Motsnyi, F.V.; Smolanka, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We performed the computer modelling of the dispersion dependences of real ε₁(E) and imaginary ε₂(E) parts of complex dielectric function ε(E) for 2H-PbI₂ crystals with atomically clean surface at the temperature 5 K and ...
  • Optical characterization of thin Au films by standard and polaritonic ellipsometry 
    Dmitruk, N.L.; Fursenko, O.V.; Kondratenko, O.S.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    This work is aimed at optical characterization of thin Au films by multiple-angle-of-incidence reflectance ellipsometry at the fixed wavelength (632.8 nm) in standard and attenuated total reflection (ATR) modes in contact ...
  • Spatial-temporal peculiarities of periodical PILS in ferroelectric PR-crystals 
    Morozovska, A.N.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the paper we theoretically consider the dynamics of the inner field and the spatial-temporal features of periodical photoinduced light scattering in photo-ferroelectrics caused by stationary laser illumination. Not only ...
  • Optical characteristics of Al₂O₃ oxide coatings on copper mirrors made by diamond microgrinding 
    Odarich, V.A.; Poperenko, L.V.; Staschuk, V.S.; Filipov, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Ellipsomety examination of dielectric sheetings and measured of reflection spectrum at normal incidence there carried out. A film of Al₂O₃ on a surface of copper mirrors of a diamond microgrinding was deposited. The thickness ...
  • Design and testing of iodine cells for metrological laser application 
    Negriyko, A.M.; Boyko, O.V.; Kachalova, N.M.; Khodakovskiy, V.M.; Klochko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The design and performance of iodine vapor cells for frequency stabilized laser applications are presented. The traditional design of iodine vapor cell and special development of cell for fluorescence applications are ...
  • Non-uniformity of cross-beam laser power distribution as a source of errors in non-linear spectroscopy 
    Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We investigated errors arising in calculations of optical signals in non-linear laser spectroscopy due to neglection of non-uniformity in cross-beam laser power distribution. The following three cases of non-linear emission ...
  • Noise-induced escape flux on time-scales preceding quasistationarity 
    Soskin, S.M.; Sheka, V.I.; Linnik, T.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Noise-induced escape from the metastable part of potential is considered on time scales preceding the formation of quasiequilibrium within that part of the potential. It is shown that, counterintuitively, the escape flux ...

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