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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Application of ferroelectrics to create electroluminescent indicators of temperature 
    Boyko, V.G.; Zayats, N.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    In this article, temperature dependences of brightness of thin film electroluminescent emitters (TFELE) based on metal-dielectric-semiconductor-metal (MDSM) structures with ceramic ferroelectric dielectric have been ...
  • Current transport mechanisms in metal – high-k dielectric – silicon structures 
    Gomeniuk, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The mechanism of current transport in several high k -dielectric, including rare earth metal oxides (Gd₂O₃, Nd₂O₃), ternary compounds (LaLuO₃) and rare earth metal silicate (LaSiOx) thin films on silicon was studied ...
  • Effect of pressure on the properties of Al-SiO₂-n-Si<Ni> structures 
    Vlasov, S.I.; Ovsyannikov, A.V.; Ismailov, B.K.; Kuchkarov, B.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We investigated the effect of hydrostatic pressure on relaxation characteristics of the three-layer Al-SiO₂-n-Si<Ni> structures. It was found that 20 min exposure to a pressure of 8 kbars results in reduction of the ...
  • Efficiency a-Si:H solar cell. Detailed theory 
    Kryuchenko, Yu.V.; Sachenko, A.V.; Bobyl, A.V.; Kostylyov, V.P.; Romanets, P.N.; Sokolovskyi, I.O.; Shkrebti, A.I.; Terukov, E.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We develop a detailed formalism to photoconversion efficiency η of hydrogenated amorphous silicon ( a-Si:H ) based solar cells with a contact grid. This efficient three-dimensional model allows firstly optimization of the ...
  • Graded-gap AlInN Gunn diodes 
    Storozhenko, I.P.; Yaroshenko, A.N.; Kaydash, M.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The paper deals with the numerical simulation of Gunn diodes operation based on the graded-gap AlInN. We have obtained the output characteristics of diodes with different cathode contacts in a wide range of frequencies. ...
  • Intensities of quantum transitions in hexagonal nanotubes within the exciton spectral range 
    Makhanets, O.M.; Tsiupak, N.R.; Voitsekhivska, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The theory of exciton spectrum and intensities of interband quantum transitions in multi-shell hexagonal semiconductor nanotube is developed within the effective masses and rectangular potentials approximations using Bethe ...
  • Mid-IR impurity absorption in As₂S₃ chalcogenide glasses doped with transition metals 
    Paiuk, A.P.; Stronski, A.V.; Vuichyk, N.V.; Gubanova, A.A.; Krys’kov, Ts.A.; Oleksenko, P.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Room temperature IR impurity absorption spectra in 1 4000 7000 cm ( 4.1 - 25um ) region for chalcogenide glasses of As₂S₃ doped with chromium (0.5, 1 wt.%) and manganese (0.1, 1, 2, 5 wt.%) have been studied. The effects ...
  • Optical absorption edge in (Ag₃AsS₃)x(As₂S₃)₁-x superionic glasses 
    Studenyak, I.P.; Kranjcec, M.; Neimet, Yu.Yu.; Pop, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The spectrometric studies of optical absorption edge in (Ag₃AsS₃)x(As₂S₃)₁-x superionic glasses were carried out within the temperature range 77 to 400 K. The influence of temperature and composition on the optical ...
  • Residual stresses and piezoelectric properties of the HgCdTe – based compound heterostructures under the anisotropic deformation restriction 
    Smirnov, A. B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Narrow-gap mercury cadmium telluride thin films grown by MBE methods onto various substrates (HgCdTe/Si, HgCdTe/GaAs) were investigated as a piezoelectric heterostructure for IR detection. Mechanical stresses at the ...
  • Synthesis route and optical characterization of CdS:Mn/polyvinyl alcohol nanocomposite 
    Fediv, V.I.; Rudko, G.Yu.; Savchuk, A.I.; Gule, E.G.; Voloshchuk, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    CdS nanoparticles doped with Mn have been synthesized in aqueous solution by using polyvinyl alcohol (PVA) as a capping reagent. Influence of the polymer concentration on the size and concentration of the nanoparticles ...
  • Technique and setup for diagnostics of p-n junction to case thermal resistance in high-power gallium nitride LEDs 
    Sorokin, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Zinovchuk, A.V.; Bigun, R.I.; Kudryk, R.Ya.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    We present a setup and procedure of studying p-n junction to case thermal resistance in high-power light-emitting diodes (LEDs) from their thermal relaxation. A set of LEDs mounted on a metal-core printed circuit board ...
  • Transport phenomena of two-dimensional band carriers with Dirac-like energetic spectrum 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    Conductivity of monolayer and bilayer graphene is considered with due regard for mutual drag of band electrons and holes. Search of contribution of the drag to conductivity shows that it sufficiently influences on mobility ...

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