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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4 за датою випуску

Сортувати за: Порядок: Результатів:

  • Sokolenko, B.V.; Rubass, A.F.; Volyar, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have experimentally considered evolution of the Gaussian beam propagating nearly perpendicular to the uniaxial crystal axis. Also we have analyzed the spin and orbital angular momenta and found oscillations of the ...
  • Totsky, I.N.; Popov, A.Yu.; Makara, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Considered in this paper is the effect of electron irradiation on the phasestructural state and micromechanical characteristics of reactively- and nonreactivelypressed TiB₂–TiС composite ceramic materials. It is shown ...
  • Zayachuk, D.M.; Ilyina, O.S.; Kaczorowski, D.; Mikityuk, V.I.; Shlemkevych, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Presented in this work are the results of the first systematic study of magnetic properties inherent to surface layers of PbTe:Eu crystals grown from melt with a low initial concentration of Eu impurity using the ...
  • Kopčansky, P.; Timko, M.; Mitrova, Z.; Zavisova, V.; Koneracka, M.; Tomašovičova, N.; Tomčo, L.; Kovalchuk, O.V.; Bykov, V.M.; Kovalchuk, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Investigated in this work has been the effect of impurities – magnetic nanoparticles (MN) and multiwall carbon nanotubes (MWNT) – separately and together on morphology and dielectric properties of nematic liquid crystal ...
  • Abdelhakim Mahdjoub; Lazhar Hadjeris (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as ...
  • Rubish, V.M.; Gera, E.V.; Durcot, M.O.; Pop, M.M.; Kostyukevich, S.O.; Kudryavtsev, A.A.; Mykulanynets-Meshko, O.S.; Rigan, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral ...
  • Trunov, M.L.; Lytvyn, P.M.; Nagy, P.M.; Oberemok, O.S.; Durkot, M.O.; Tarnaii, A.A.; Prokopenko, I.V.; Rubish, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have established that mass-transport processes in two types of amorphous materials, based on light-sensitive inorganic compounds like Se and As₂₀Se₈₀ chalcogenide glasses (ChG), can be enhanced at the nanoscale in the ...
  • Sachenko, A.V.; Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Klad’ko, V.P.; Konakova, R.V.; Kuchuk, A.V.; Korostinskay, T.V.; Pilipchuk, A.S.; Sheremet, V.N.; Mazur, Yu.I.; Ware, M.E.; Salamo, G.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present the results of structural and morphological investigations of interactions between phases in the layers of Au-Pd-Ti-Pd-n⁺-GaN contact metallization that appear at rapid thermal annealing (RTA). It is shown that ...
  • Nazarov, A.N.; Vasin, A.V.; Gordienko, S.O.; Lytvyn, P.M.; Strelchuk, V.V.; Nikolenko, A.S.; Stubrov, Yu.Yu.; Hirov, A.S.; Rusavsky, A.V.; Popov, V.P.; Lysenko, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    This paper considers a synthesis of graphene flakes on the Ni surface by vacuum long and nitrogen rapid thermal treatment of the “sandwich” amorphous (a) SiC/Ni multilayer deposited on silicon wafer by magnetron sputtering ...
  • Neimash, V.B.; Poroshin, V.M.; Shepeliavyi, P.Ye.; Yukhymchuk, V.O.; Melnyk, V.V.; Makara, M.A.; Kuzmich, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis ...
  • Kryuchyn, A.A.; Petrov, V.V.; Kostyukevych, S.O.; Kostyukevych, K.V.; Kudryavtsev, A.A.; Moskalenko, N.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Considered in this paper are causes for cutting compact discs out of information technology market. It has been shown a search of new technological solutions for efficient use of CDs in archive data storage.
  • Kolomiets, I.S.; Savenkov, S.N.; Oberemok, Ye.A.; Klimov, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper, basing on the anisotropic properties of longitudinal inhomogeneous nondepolarizing media with linear phase anisotropy, more general type of media with elliptical phase anisotropy was studied. The features ...

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