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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2016, № 2 за назвою

Сортувати за: Порядок: Результатів:

  • Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern 
    Sizov, F.F.; Tsybrii, Z.F.; Zabudsky, V.V.; Sakhno, M.V.; Shevchik-Shekera, A.V.; Dukhnin, S.Ye.; Golenkov, A.G.; Dieguez, E.; Dvoretsky, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas ...
  • Dielectric spectroscopy of CuInSe₂ single crystals 
    Mustafaeva, S.N.; Asadov, S.M.; Guseinov, D.T.; Kasimoglu, I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The results of high-frequency dielectric measurements with obtained α-CuInSe₂ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density ...
  • Enhanced optical transmission of the triple-layer resonant waveguide structure 
    Yaremchuk, I.Ya.; Fitio, V.M.; Bobitski, Ya.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this paper, we propose and demonstrate a novel guided-mode resonant filter based on a metallic grating sandwiched between two dielectric layers for TE polarization. A theoretical model based on rigorous coupled wave ...
  • Influence of field dependent form of collision integral on kinetic coefficients 
    Boiko, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The kinetic equation is turned out in the form that contains collision integral obviously dependent on the value of external electric and magnetic fields. The correspondent calculation of kinetic coefficients shows that ...
  • Integration of LED/SC chips (matrix) in reverse mode with solar energy storage 
    Osinsky, V.I.; Masol, I.V.; Feldman, I.Kh.; Diagilev, A.V.; Sukhovii, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    In this work, for the first time we investigated controlling the quantum efficiencies of III-nitride LED/SC (solar cells) new energy accumulating elements and supercapacitors as energy storage devices (Enestors). It has ...
  • Low doses effect in GaP light-emitting diodes 
    Hontaruk, O.M.; Konoreva, O.V.; Malyi, Ye.V.; Petrenko, I.V.; Pinkovska, M.B.; Radkevych, O.I.; Tartachnyk, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper is devoted to the electrophysical characteristics study of serial red and green GaP light-emitting diodes (LEDs) irradiated with low α-particles doses (Φ ≤ 10¹² cm⁻²). It was stated that radiation features of ...
  • New method for estimating the refractive index of optical materials in spectrally selective elements 
    Manko, A.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A numerical simulation of the scattering indicatrix in optical spectral-selective cylindrical form elements has been performed. As it follows from the results of the calculations, the shape of the scattering indicatrix of ...
  • Optical studies of as-deposited and annealed Cu₇GeS₅I thin films 
    Studenyak, I.P.; Bendak, A.V.; Rybak, S.O.; Izai, V.Yu.; Kúš, P.; Mikula, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Cu₇GeS₅I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu₇GeS₅I thin films were measured in the ...
  • Performance limits of terahertz zero biased rectifying detectors for direct detection 
    Golenkov, A.G.; Sizov, F.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in ...
  • Possible mechanism of inhibition of virus infectivity with nanoparticles 
    Khylko, O.L.; Rusinchuk, N.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possible mechanism of inhibition of virus infectivity with nanoparticles has been considered both theoretically and experimentally. It has been supposed that inhibition is caused by action of the nanoparticles on ...
  • Precise measurements of the wavelength in KrCl laser spectral region (222 nm) 
    Zubrilin, N.G.; Pavlov, I.A.; Baschenko, S.M.; Tkachenko, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The technique for precise measurements of wavelengths in the range around 222 nm (45030 cm⁻¹) has been presented. The reciprocal linear dispersion of the spectrometer was 0.529 Å/mm. The measurements were made in the second ...
  • Protective applications of vacuum-deposited perfluoropolymer films 
    Grytsenko, K.P.; Kolomzarov, Yu.V.; Belyaev, O.E.; Schrader, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper summarizes in brief applications of perfluoropolymer thin films deposited from the gas phase by several different methods, for protection of various materials and devices both at the research stage and already ...
  • Structural properties of chalcogenide glasses As₂Se₃ doped with manganese 
    Paiuk, O.P.; Revutska, L.O.; Stronski, A.V.; Gudymenko, A.Yo.; Stanchu, H.V.; Gubanova, A.A.; Kryskov, Ts.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The paper presents the results of studying structural properties inherent to chalcogenide glasses doped with manganese. Investigations of the structure were carried out using Raman spectroscopy and X-ray diffraction. The ...
  • Van der Waals interaction between surface and particle with giant polarizability 
    Makhnovets, K.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    We show that a nanoparticle with a “giant” polarizability α (i.e., with the polarizability volume α′ = α/4πε₀ significantly exceeding the particle volume) placed in the vicinity of a surface experiences a strongly increased ...
  • Variational approach to the calculation of the lowest Wannier exciton state in wide type-II single semiconductor quantum wells 
    Vertsimakha, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The possibility to change the spatial character of the Wannier exciton ground state in a wide single type-II semiconductor quantum well has been studied variationally. A heterostructure with the central layer forming a ...
  • ZnTe-based UV sensors 
    Pavelets, S.Yu.; Bobrenko, Yu.N.; Semikina, T.V.; Sheremetova, G.I.; Atdaiev, В.S.; Krulikovska, K.B.; Mazin, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal ...

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