Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Chemical polishing of InAs, InSb, GaAs and GaSb
Репозиторій DSpace/Manakin
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Chemical polishing of InAs, InSb, GaAs and GaSb
Тема:
Technology
Інший ID:
DOI: https://doi.org/10.15407/fm24.04.654
Посилання:
Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ.
Дата:
2017
Переглядів:
858
Завантажень:
630
Анотація:
The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized.
