Chemical polishing of InAs, InSb, GaAs and GaSb

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Відділення фізико-технічних проблем матеріалознавства
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Functional Materials
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Functional Materials, 2017, том 24
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Functional Materials, 2017, № 4
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dc.contributor.author	Levchenko, I.V.
dc.contributor.author	Tomashyk, V.M.
dc.contributor.author	Stratiychuk, I.B.
dc.contributor.author	Malanych, G.P.
dc.contributor.author	Stanetska, A.S.
dc.contributor.author	Korchovyi, A.A.
dc.date.accessioned	2018-06-16T17:23:19Z
dc.date.available	2018-06-16T17:23:19Z
dc.date.issued	2017
dc.identifier.citation	Chemical polishing of InAs, InSb, GaAs and GaSb / I.V. Levchenko, V.M. Tomashyk, I.B. Stratiychuk, G.P. Malanych, A.S. Stanetska, A.A. Korchovyi // Functional Materials. — 2017. — Т. 24, № 4. — С. 654-659. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.other	DOI: https://doi.org/10.15407/fm24.04.654
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/136890
dc.description.abstract	The mechanism and kinetics of chemical dissolution of InAs, InSb, GaAs and GaSb in (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching mixtures have been studied. Influence of tartaric acid on the parameters of chemical-dynamic polishing and morphology of the obtained crystals surface has been determined. Using of (NH₄)₂Cr₂O₇-HBr-C₄H₆O₆ etching solutions provides the controlled removal of thin layers and the polishing of investigated semiconductors. The polishing etchant compositions have been proposed and conditions for the chemical-dynamic polishing of the InAs, InSb, GaAs and GaSb crystals have been optimized.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Technology	uk_UA
dc.title	Chemical polishing of InAs, InSb, GaAs and GaSb	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA