The chemical dissolution of InAs, InSb, GaAs and GaSb crystals in (NH₄)₂Cr₂O₇-HBr-C₆H₈O₇ etching solutions has been investigated. The dissolution rate of the semiconductor materials has been measured as a function of etchant ...

Peculiarities of thermal solid-phase transformations of Co₁₋xMnxHPO₄·1.5 H₂O (0 ≤ x ≤ 0.45), which accompanying the formation of a final product of thermolysis - anhydrous diphosphate solid solution with composition ...