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dc.contributor.author Klochko, N.P.
dc.contributor.author Volkova, N.D.
dc.contributor.author Dobrotvorskaya, M.V.
dc.contributor.author Kopach, V.R.
dc.contributor.author T.A. Li
dc.date.accessioned 2018-06-17T09:14:47Z
dc.date.available 2018-06-17T09:14:47Z
dc.date.issued 2008
dc.identifier.citation Electrochemical deposition of cadmium telluride films / N.P. Klochko, N.D. Volkova, M.V. Dobrotvorskaya, V.R. Kopach, T.A. Li // Functional Materials. — 2008. — Т. 15, № 1. — С. 119-126. — Бібліогр.: 13 назв. — англ. uk_UA
dc.identifier.issn 1027-5495
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/137232
dc.description.abstract The mechanisms of electrochemical processes in the electrolyte for cadmium telluride semi-conducting film deposition and in corresponding partial solutions containing cadmium and tellurium ions have been studied by voltammetry with linear potential scanning and by cyclic voltammetry. The differences between cathodic processes on chemically inert titanium nitride substrates and catalytically active molybdenum surface have been revealed. Basing on these studies, the nature of impurities discovered in this work by X-ray photoelectron spectroscopy at the surface and inside the cadmium telluride films deposited on molybdenum and titanium nitride surfaces has been explained. The latter made it possible to select the electrodeposition parameters and the substrate material which provide the stoichiometric film composition. uk_UA
dc.language.iso en uk_UA
dc.publisher НТК «Інститут монокристалів» НАН України uk_UA
dc.relation.ispartof Functional Materials
dc.subject Technology uk_UA
dc.title Electrochemical deposition of cadmium telluride films uk_UA
dc.title.alternative Електохімічне осадження плівок телуриду кадмію uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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