Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis
Репозиторій DSpace/Manakin
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| dc.contributor.author | Kushnir, B.V. | |
| dc.contributor.author | Kovalyuk, Z.D. | |
| dc.contributor.author | Katerynchuk, V.M. | |
| dc.contributor.author | Netyaga, V.V. | |
| dc.contributor.author | Tkachuk, I.G. | |
| dc.date.accessioned | 2018-06-16T16:14:27Z | |
| dc.date.available | 2018-06-16T16:14:27Z | |
| dc.date.issued | 2017 | |
| dc.identifier.citation | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis / B.V. Kushnir, Z.D. Kovalyuk, V.M. Katerynchuk, V.V. Netyaga, I.G. Tkachuk // Functional Materials. — 2017. — Т. 24, № 3. — С. 372-375. — Бібліогр.: 16 назв. — англ. | uk_UA |
| dc.identifier.issn | 1027-5495 | |
| dc.identifier.other | DOI: https://doi.org/10.15407/fm24.03.372 | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/136789 | |
| dc.description.abstract | A new heterojunction (GP) p-FeIn₂Se₄-n-In₄Se₃ was formed by the mechanical contact of the FeIn₂Se₄ plate with the van der Waals surface of In₄Se₃. Investigation of Volt-Farada's, spectral characteristics and temperature dependences of the VAC of the heterojunction. On the basis of the analysis of electric and photovoltaic characteristics of the GP, a high-quality zone diagram was constructed. The region of spectral photosensitivity of p-FeIn₂Se₄-n-In₄Se₃ GP which is in the range 0.7-1.3 eV, is established. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | НТК «Інститут монокристалів» НАН України | uk_UA |
| dc.relation.ispartof | Functional Materials | |
| dc.subject | Characterization and properties | uk_UA |
| dc.title | Layered crystals FeIn₂Se₄, In₄Se₃ and heterojunctions on their basis | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
