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dc.contributor.author |
Ahmed, A.M. |
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dc.contributor.author |
Abd El-Mo’ez A. Mohamed |
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dc.contributor.author |
Mohamed, H.F. |
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dc.contributor.author |
Diab, A.K. |
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dc.contributor.author |
Mohamed, Aml M. |
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dc.contributor.author |
Mazen, A.E.A. |
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dc.date.accessioned |
2018-01-18T17:37:23Z |
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dc.date.available |
2018-01-18T17:37:23Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system / A.M. Ahmed, Abd El-Mo’ez A. Mohamed, H.F. Mohamed, A.K. Diab, Aml M. Mohamed, A.E. A. Mazen // Физика низких температур. — 2016. — Т. 42, № 9. — С. 951-958. — Бібліогр.: 34 назв. — англ. |
uk_UA |
dc.identifier.issn |
0132-6414 |
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dc.identifier.other |
PACS: 75.47.Lx, PACS: 75.47.Gk, 72.80.Tm |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/129293 |
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dc.description.abstract |
This investigation is mainly concerned with the effect of annealing temperature (600, 700, 800, and 900 °C) in air for (La₀.₇Ba₀.₃MnO₃)₁–x/(NiO) x with x = 0 and x = 0.10 samples. It was shown that the annealing temperature does not affect the structure and parameters of rhombohedral lattice of the samples. However, it is observed that the annealing treatment has a notable effect on the electrical resistivity and the metal-semiconductor transition temperature Tms. Temperature dependent magnetization measurements showed a decrease in Curie temperature TC with annealing temperature. In the same time, annealing process decreases the magnetoresistance of La₀.₇Ba₀.₃MnO₃, in contrast to (La₀.₇Ba₀.₃MnO₃)₀.₉/(NiO)₀.₁ composite. |
uk_UA |
dc.description.sponsorship |
Authors acknowledge the finical support provided by
the Science and Technology Development Fund (STDF),
Egypt, Grant project No 3002. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України |
uk_UA |
dc.relation.ispartof |
Физика низких температур |
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dc.subject |
Низкотемпеpатуpный магнетизм |
uk_UA |
dc.title |
The annealing influence onto the electrical and magnetic behavior of magnetoresistive/insulator system |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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