Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

Charikova, T. ; Okulov, V. ; Gubkin, A. ; Lugovikh, A. ; Moiseev, K. ; Nevedomsky, V. ; Kudriavtsev, Yu. ; Gallardo, S. ; Lopez, M.

Тема: XX Уральская международная зимняя школа по физике полупроводников

Інший ID: PACS: 72.80.Ey, 75.50.Pp

URI: http://dspace.nbuv.gov.ua/handle/123456789/122039

Посилання: Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese / T. Charikova, V. Okulov, A. Gubkin, A. Lugovikh, K. Moiseev, V. Nevedomsky, Yu. Kudriavtsev, S. Gallardo, M. Lopez // Физика низких температур. — 2015. — Т. 41, № 2. — С. 207-209. — Бібліогр.: 9 назв. — англ.

Підтримка: This work was done within RAS Program (project No. 12-P-2-1018) with partial support of RFBR (grant No. 15-02-08909). Authors from Cinvestav thank to SENER and CONACYT, both from Mexico for a financial support of this study, grant No. 152244.

Дата: 2015

Завантажень: 470

Magnetization in AIIIBV semiconductor heterostructures with the depletion layer of manganese

Анотація:

The magnetic moment and magnetization in GaAs/Ga₀.₈₄In₀.₁₆As/GaAs heterostructures with Mn deluted in GaAs cover layers and with atomically controlled Mn δ-layer thicknesses near GaInAs-quantum well (~3 nm) in temperature range T = 1.8–300 K in magnetic field up to 50 kOe have been investigated. The mass magnetization all of the samples of GaAs/Ga₀.₈₄In₀.₁₆As/GaAs with Mn increases with the increasing of the magnetic field that pointed out on the presence of low-dimensional ferromagnetism in the manganese depletion layer of GaAs based structures. It has been estimated the manganese content threshold at which the ferromagnetic ordering was found.

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