Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3
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dc.contributor.author	Yaremko, A.M.
dc.contributor.author	Yukhymchuk, V.O.
dc.contributor.author	Romanyuk, Yu.A.
dc.contributor.author	Virko, S.V.
dc.date.accessioned	2017-06-13T17:45:06Z
dc.date.available	2017-06-13T17:45:06Z
dc.date.issued	2015
dc.identifier.citation	Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals / A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 354-361. — Бібліогр.: 20 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.03.354
dc.identifier.other	PACS 71.36.+c, 78.30.Hv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121246
dc.description.abstract	Raman scattering in mixed MoS₂/MoSe₂ layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E¹₂g and outof-plane A₁g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlayer interaction was obtained from comparison of experiment and theory, and effect of this interaction on the frequency of intralayer phonon was studied.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Theoretical and experimental study of Raman scattering in mixed (MoS₂)x(MoSe₂)₁₋x layered crystals	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA