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dc.contributor.author |
Tagiyev, B.G. |
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dc.contributor.author |
Madatov, R.S. |
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dc.contributor.author |
Aydayev, F.Sh. |
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dc.contributor.author |
Abbasova, T.M. |
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dc.date.accessioned |
2017-06-13T17:14:12Z |
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dc.date.available |
2017-06-13T17:14:12Z |
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dc.date.issued |
2002 |
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dc.identifier.citation |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals / B.G. Tagiyev, R.S. Madatov, F.Sh. Aydayev, T.M. Abbasova // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 3. — С. 261-263. — Бібліогр.: 5 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 72.80.-r, 78.60.Fi |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/121236 |
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dc.description.abstract |
The paper deals with electroluminescence investigations in GaSe:Er monocrystals. It is ascertained that Er³⁺ centers in GaSe are excited by two ways: a) as a result of non-radiating recombination of the injected charge carrier in donor-acceptor states and, b) transfer of evolved energy by means of Coulomb interaction. The concentration of majority carriers in the current step field (6.26•10¹¹ cm⁻³) and activation energy of impurities (0.14 eV) have been determined using data obtained. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Mechanisms of current passage and excitation of electroluminescence in GaSe:Er monocrystals |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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