Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3
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dc.contributor.author	Azhniuk, Yu.M.
dc.contributor.author	Gomonnai, A.V.
dc.contributor.author	Gomonnai, O.O.
dc.contributor.author	Hasynets, S.M.
dc.contributor.author	Kováč, F.
dc.contributor.author	Lopushansky, V.V.
dc.contributor.author	Petryshynets, I.
dc.contributor.author	Rubish, V.M.
dc.contributor.author	Zahn, D.R.T.
dc.date.accessioned	2017-06-13T16:50:47Z
dc.date.available	2017-06-13T16:50:47Z
dc.date.issued	2015
dc.identifier.citation	Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix / Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kováč, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 248-254. — Бібліогр.: 41 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.03.248
dc.identifier.other	PACS 64.70.pn, 78.67.-n, 82.80.Gk
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121206
dc.description.abstract	Sn–As–P–S glasses were obtained using co-melting of pre-synthesized As₂S₃ and Sn₂P₂S₆. Their structure and composition were confirmed by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, and micro-Raman scattering. Crystallization of Sn₂P₂S₆ crystallites from the glass matrix is observed at annealing under relatively low temperatures (410…580 K).	uk_UA
dc.description.sponsorship	Yu.M. Azhniuk is grateful to Deutscher Akademischer Austauschdienst (DAAD) for the support of his research at Chemnitz University of Technology.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Annealing-induced formation of Sn₂P₂S₆ crystallites in As₂S₃-based glass matrix	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA