Mechanism of 6H-3C transformation in SiC

dc.contributor.author	Vlaskina, S.I.
dc.date.accessioned	2017-06-13T16:42:21Z
dc.date.available	2017-06-13T16:42:21Z
dc.date.issued	2002
dc.identifier.citation	Mechanism of 6H-3C transformation in SiC / S.I. Vlaskina // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 2. — С. 152-155. — Бібліогр.: 5 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 77.84.B
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/121188
dc.description.abstract	Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid transformation have been studied. Calculated nitrogen concentration from the Hall effect and EPR spectra for transformed crystals show its decreasing value in 3C-SiC. Data show appearance of new defects - donors and acceptors - that make nitrogen optically and electrically non-active. These defects accompany the process of transformation.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Mechanism of 6H-3C transformation in SiC	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA