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Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2002, том 5
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2002, № 1
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| dc.contributor.author | Bravina, S.L. | |
| dc.contributor.author | Cattan, E. | |
| dc.contributor.author | Morozovsky, N.V. | |
| dc.contributor.author | Remiens, D. | |
| dc.date.accessioned | 2017-06-13T15:20:29Z | |
| dc.date.available | 2017-06-13T15:20:29Z | |
| dc.date.issued | 2002 | |
| dc.identifier.citation | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector / S.L. Bravina, E. Cattan, N.V. Morozovsky, D. Remiens // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 89-94. — Бібліогр.: 7 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS: 78.20.-e | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/121122 | |
| dc.description.abstract | The main characteristics of position sensitive systems of pyroelectric detectors of radiation (PDR) with sensitive elements based on PZT film on Si-substrate were investigated by photopyromodulation method. Pt-PZT-Pt/Ti-SiO₂/Si structures with 1.9 mm (111)-oriented PZT (54/46) layer were manufactured by R.F. magnetron sputtering. Top Pt electrodes in a shape of isosceles rectangular triangle together make the quadrant-diagonal system. The results of pyroelectric undersurface probing and “along surface” pyroelectric scanning show that the investigated quadrant-diagonal system of SE makes it possible to examine all main types of differential position-sensitive PDR. The experimental results for investigated 2-element single-coordinate PDR variants are in a good agreement with calculations for the corresponding systems. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Thin film PZT-Si structure with quadrant-diagonal electrode system as an element of position sensitive pyroelectric detector | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
