Посилання:Nonequilibrium plasmons and transport properties of a
double-junction quantum wire / J.U. Kim, Mahn-Soo Choi, I.V. Krive, J.M. Kinaret // Физика низких температур. — 2006. — Т. 32, № 12. — С. 1522–1544. — Бібліогр.: 78 назв. — англ.
Підтримка:This work has been supported by the Swedish Foundation
for Strategic Research through the CARAMEL consortium,
STINT, the SKORE-A program, the eSSC at
Postech, and the SK-Fund. J.U. Kim acknowledges partial financial support from Stiftelsen Fru Mary von
Sydows, fodd Wijk, donationsfond. I.V. Krive gratefully
acknowledges the hospitality of the Department of Applied
Physies at Chalmers University of Technology.
We study theoretically the current-voltage characteristics, shot noise, and full counting statistics
of a quantum wire double barrier structure. We model each wire segment by a spinless
Luttinger liquid. Within the sequential tunneling approach, we describe the system’s dynamics
using a master equation. We show that at finite bias the nonequilibrium distribution of plasmons
in the central wire segment leads to increased average current, enhanced shot noise, and full counting
statistics corresponding to a super-Poissonian process. These effects are particularly pronounced
in the strong interaction regime, while in the noninteracting case we recover results obtained
earlier using detailed balance arguments.