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dc.contributor.author |
Rusakov, K.I. |
|
dc.contributor.author |
Parashchuk, V.V. |
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dc.date.accessioned |
2017-06-12T18:01:38Z |
|
dc.date.available |
2017-06-12T18:01:38Z |
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dc.date.issued |
2015 |
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dc.identifier.citation |
Nonlinear-optical processes at streamer discharge in semiconductors / K.I. Rusakov, V.V. Parashchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 36-39. — Бібліогр.: 13 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
DOI: 10.15407/spqeo18.01.036 |
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dc.identifier.other |
PACS 42.65.-k, 52.80.-s |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/120724 |
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dc.description.abstract |
The possibility of light auto-channelling (self-trapping) in conditions of streamer discharge in hexagonal and cubic semiconductors was shown. It is considered the mechanism of discharge in the wide-gap compounds on the basis of representation about the light auto-channelling at streamer excitation, providing their high propagation velocity down to ~5∙10⁹ cm/s, the crystallographic orientation (directionality), filamentary character at thickness of the channel about 1 μm and absence of the catastrophic destructions of a crystal. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Nonlinear-optical processes at streamer discharge in semiconductors |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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