The role of optical phonons in electrons heating by IR radiation in Ge

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8
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Semicond. Physics Quantum Electronics & Optoelectronics, 2005, № 2
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dc.contributor.author	Poroshin, V.N.
dc.contributor.author	Sarbey, O.G.
dc.date.accessioned	2017-06-12T15:42:17Z
dc.date.available	2017-06-12T15:42:17Z
dc.date.issued	2005
dc.identifier.citation	The role of optical phonons in electrons heating by IR radiation in Ge / V.N. Poroshin, O.G. Sarbey // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2005. — Т. 8, № 1. — С. 1-3. — Бібліогр.: 1 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 05.50. + q, 61.50.Em, 82.20.Fd
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120657
dc.description.abstract	An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration in each valley has been obtained. It was shown that taking into account the contribution of such scattering into absorption of a CO₂ laser radiation enables to achieve a quantitative agreement between the calculated and experimental values for the intervalley redistribution of electrons due to heating carriers by the light wave in Ge at 300 and 77 K.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	The role of optical phonons in electrons heating by IR radiation in Ge	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA