Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs

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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 1
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dc.contributor.author	Golenkov, A.G.
dc.contributor.author	Zhuravlev, K.S.
dc.contributor.author	Gumenjuk-Sichevska, J.V.
dc.contributor.author	Lysiuk, I.O.
dc.contributor.author	Sizov, F.F.
dc.date.accessioned	2017-06-12T15:14:02Z
dc.date.available	2017-06-12T15:14:02Z
dc.date.issued	2015
dc.identifier.citation	Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs / A.G. Golenkov, K.S. Zhuravlev, J.V. Gumenjuk-Sichevska, I.O. Lysiuk, F.F. Sizov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 1. — С. 40-45. — Бібліогр.: 21 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	DOI: 10.15407/spqeo18.01.040
dc.identifier.other	PACS 07.57.Kp, 73.40.-c, 85.30.Tv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120648
dc.description.abstract	Un-cooled AlGaN/GaN-based heterojunction field-effect transistors (HFET) designed on sapphire (0001) substrates were considered as 140 GHz direct detection detectors without any specially attached antennas. The noise equivalent power (NEP) of these detectors was ~ 10⁻¹⁰ W/Hz¹/² in the observed radiation frequency range at ambient temperatures. It has been shown that the ultimate value for the AlGaN/GaN HFET detectors (in 0.25-μm technology) can reach NEPopt ≈ 6•10⁻¹² W/Hz¹/² , and it is 3-fold lower than that for Si MOSFET (in 0.35-μm technology).	uk_UA
dc.description.sponsorship	Authors are very thankful to Research Fellow Svetlana G. Bunchuk for her scrupulous attitude towards preparation of the samples, and Dr. Mikolay V. Sakhno for useful discussions. This work was partly supported by Ukrainian Program of Basic Researches (grant No. 11/14-H) and joint project of Ukrainian National Academy of Sciences (grant No. 01-02-2012) and Siberian Branch of Russian Academy of Sciences (grant No. 15.1).	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA