Deep acceptor trapping centers in CdI₂-PbI₂ crystal system

dc.contributor.author	Galchynsky, O.V.
dc.contributor.author	Gloskovska, N.V.
dc.contributor.author	Yarytska, L.I.
dc.date.accessioned	2017-06-12T07:49:52Z
dc.date.available	2017-06-12T07:49:52Z
dc.date.issued	2014
dc.identifier.citation	Deep acceptor trapping centers in CdI₂-PbI₂ crystal system / O.V. Galchynsky, N.V. Gloskovska, L.I. Yarytska // Functional Materials. — 2014. — Т. 21, № 3. — С. 243-246. — Бібліогр.: 23 назв. — англ.	uk_UA
dc.identifier.issn	1027-5495
dc.identifier.other	DOI: dx.doi.org/10.15407/fm21.03.243
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120454
dc.description.abstract	The model of acceptor trapping centers which consists of Pb³⁺ ion and two atomic I⁰ centers in the temperature range 200-270 K has been suggested. It was constructed on the basis of measurements of thermally stimulated depolarization and spectral sensitivity of photoelectret state in CdI₂ crystals with PbI₂ nanoinclusions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	НТК «Інститут монокристалів» НАН України	uk_UA
dc.relation.ispartof	Functional Materials
dc.subject	Characterization and properties	uk_UA
dc.title	Deep acceptor trapping centers in CdI₂-PbI₂ crystal system	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA