Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2000, том 3
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Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1
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dc.contributor.author	Neimash, V.B.
dc.contributor.author	Puzenko, O.O.
dc.contributor.author	Kraitchinskii, A.M.
dc.contributor.author	Krasko, M.M.
dc.contributor.author	Putselyk, S.
dc.contributor.author	Claeys, C.
dc.contributor.author	Simoen, E.
dc.date.accessioned	2017-06-11T13:11:43Z
dc.date.available	2017-06-11T13:11:43Z
dc.date.issued	2000
dc.identifier.citation	Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon / V.B. Neimash, O.O. Puzenko, A.M. Kraitchinskii, M.M. Kras'ko, S.Putselyk, C. Claeys, E. Simoen // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2000. — Т. 3, № 1. — С. 11-14. — Бібліогр.: 17 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.T, C, 66.30.L, 72.80.C, 73.61.C
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/120226
dc.description.abstract	Activation energy of thermal donors annealing increases from 1.7 to 2.5 eV on preliminary heat treatment of the Si crystals at 800⁰C. It is believed that this fact results from the dissolution of oxygen microfluctuations that are considered to be sources of intrinsic elastic strains and thereby to lie at the basis of locally accelerated oxygen diffusion.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Microfluctuations of oxygen impurity concentration as a reason of accelerated oxygen diffusion in silicon	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA