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| dc.contributor.author | 
Kanishchev, V.N. | 
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| dc.date.accessioned | 
2017-06-10T11:08:09Z | 
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| dc.date.available | 
2017-06-10T11:08:09Z | 
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| dc.date.issued | 
2013 | 
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| dc.identifier.citation | 
The increase of crystal growing rate without damaging the smoothness of interface border / V.N. Kanishchev // Functional Materials. — 2013. — Т. 20, № 1. — С. 123-126. — Бібліогр.: 7 назв. — англ. | 
uk_UA | 
| dc.identifier.issn | 
1027-5495 | 
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| dc.identifier.other | 
DOI: dx.doi.org/10.15407/fm20.01.123 | 
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| dc.identifier.uri | 
http://dspace.nbuv.gov.ua/handle/123456789/119910 | 
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| dc.description.abstract | 
This paper provides literature data on non-stationary crystallization of binary melt, making it possible to put forward a hypothesis about a fluctuation mechanism of the structure transitions on the interface surface. Another argument for this hypothesis is the authors' observation results of the front crystallization at growing a sapphire crystal by horizontal directed crystallization. It has been suggested that it will be possible to grow crystals with a smooth interface border faster at a variable rate of crystallization rather than at a constant one. | 
uk_UA | 
| dc.language.iso | 
en | 
uk_UA | 
| dc.publisher | 
НТК «Інститут монокристалів» НАН України | 
uk_UA | 
| dc.relation.ispartof | 
Functional Materials | 
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| dc.subject | 
Technology | 
uk_UA | 
| dc.title | 
The increase of crystal growing rate without damaging the smoothness of interface border | 
uk_UA | 
| dc.type | 
Article | 
uk_UA | 
| dc.status | 
published earlier | 
uk_UA | 
             
        
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