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Urbach’s rule peculiarities in structures with CdSxSe₁₋x nanocrystals

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dc.contributor.author Kunets, V.P.
dc.contributor.author Kulish, N.R.
dc.contributor.author Kunets, Vas.P.
dc.contributor.author Lisitsa, M.P.
dc.date.accessioned 2017-06-07T12:41:55Z
dc.date.available 2017-06-07T12:41:55Z
dc.date.issued 2002
dc.identifier.citation Urbach’s rule peculiarities in structures with CdSxSe₁₋x nanocrystals / V.P. Kunets, N.R. Kulish, Vas.P. Kunets, M.P. Lisitsa // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2002. — Т. 5, № 1. — С. 9-15. — Бібліогр.: 16 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 78.67. Bf, 78.67.Hc
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119569
dc.description.abstract We have found that the long wavelength fundamental absorption edge of CdSXSe₁-x nanocrystals grown in an oxide glass follows to the generalized Urbach rule that takes into account both the dynamic (phonon induced) and static (defect induced) disorders of nanocrystal lattice. Temperature intervals with the dominant influence of both disorders on the absorption edge were determined. We have also estimated Urbach rule constants comparing them with the bulk ones. Using various Urbach`s rule theories we analyzed the most considerable changes of nanocrystal parameters when their sizes are decreased down to the quantum scale. It was found that the exciton-phonon coupling constant and exciton localization one are increased; the average electric fields induced by phonons and charged point defects are also increased. uk_UA
dc.description.sponsorship The authors thank to Malysh N.1. for his assistance in measurements. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Urbach’s rule peculiarities in structures with CdSxSe₁₋x nanocrystals uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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