Increase of planar homogeneity of multi-silicon  structures by gettering treatments

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 2
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dc.contributor.author	Litovchenko, V.G.
dc.contributor.author	Efremov, A.A.
dc.contributor.author	Evtukh, A.A.
dc.contributor.author	Rassamakin, Yu.V.
dc.contributor.author	Klyui, M.I.
dc.contributor.author	Kostylov, V.P.
dc.date.accessioned	2017-06-05T16:33:47Z
dc.date.available	2017-06-05T16:33:47Z
dc.date.issued	2001
dc.identifier.citation	Increase of planar homogeneity of multi-silicon structures by gettering treatments / V.G. Litovchenko, A.A. Efremov, A.A. Evtukh, Yu.V. Rassamakin, M.I. Klyui, V.P. Kostylov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 2. — С. 82-84. — Бібліогр.: 1 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.72.Y; 72.40; 81.05.C; 81.65.T
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119249
dc.description.abstract	Two types of gettering treatments are considered and compared from the viewpoint of their usefulness to decrease LD scatter over the wafer in multi-silicon photovoltaic structures. It was found that in both cases high degree of homogeneity in LD distribution over the sample surface and cleaning of the samples from recombination active impurities are achieved. Possible mechanisms of the homogenization are briefly discussed.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Increase of planar homogeneity of multi-silicon structures by gettering treatments	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA