Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4
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Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 1
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dc.contributor.author	Korovin, A.V.
dc.date.accessioned	2017-06-05T15:56:23Z
dc.date.available	2017-06-05T15:56:23Z
dc.date.issued	2001
dc.identifier.citation	Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well / A.V. Korovin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2001. — Т. 4, № 1. — С. 34-39. — Бібліогр.: 19 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 73.20.D, 85.30.V
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/119237
dc.description.abstract	The difference harmonic generation in an asymmetric quantum well based on AlSb/InSb heterostructures has been calculated. The intersubband electron spin-flip transitions are analyzed in the framework of the three-band Kane model. Numerical results for the spectral dependencies of a nonlinear susceptibility under of a double resonance conditions for CO₂ laser have been obtained.	uk_UA
dc.description.sponsorship	The author thanks participants of the seminar of the Department of theoretical physics of Institute of Semiconductor Physics for their useful remarks and advices.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA