Наукова електронна бібліотека
періодичних видань НАН України

Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact

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dc.contributor.author Kovalyuk, Z.D.
dc.contributor.author Sydor, O.M.
dc.contributor.author Netyaga, V.V.
dc.date.accessioned 2017-06-05T09:35:45Z
dc.date.available 2017-06-05T09:35:45Z
dc.date.issued 2004
dc.identifier.citation Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 73.40.Lq
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/119215
dc.description.abstract Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm². The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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