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dc.contributor.author |
Kovalyuk, Z.D. |
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dc.contributor.author |
Sydor, O.M. |
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dc.contributor.author |
Netyaga, V.V. |
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dc.date.accessioned |
2017-06-05T09:35:45Z |
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dc.date.available |
2017-06-05T09:35:45Z |
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dc.date.issued |
2004 |
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dc.identifier.citation |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact / Z.D. Kovalyuk, O.M. Sydor, V.V. Netyaga // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 4. — С. 360-362. — Бібліогр.: 10 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS: 73.40.Lq |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/119215 |
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dc.description.abstract |
Photosensitive heterojunctions were created by the method of optical contact of layered semiconductor InSe to CuInSe₂ plates. Due to high quality of contacting surfaces, a strong and enough perfect electrical junction is formed. To understand processes occurring in such heterojunctions, the measurements of current-voltage characteristics in forward and reverse directions, photoelectric modification of the direct branch of the current-voltage characteristic, capacitance-voltage characteristic, spectrum of the relative quantum efficiency have been carried out at the room temperature. The structures had a well-pronounced photovoltaic effect – the open-circuit voltage was 0.5 V and the short-circuit current density – 0.7 mА/cm². The conclusion about possibility of application of the obtained heterojunctions as photodetectors is made. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
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dc.title |
Electrical and photoelectrical properties of n-InSe/p-CuInSe₂ optical contact |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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